Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

2002 ◽  
Vol 66 (4) ◽  
Author(s):  
D. C. Law ◽  
Y. Sun ◽  
C. H. Li ◽  
S. B. Visbeck ◽  
G. Chen ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source

1989 ◽  
Vol 54 (9) ◽  
pp. 857-858 ◽  
Author(s):  
A. Molassioti ◽  
M. Moser ◽  
A. Stapor ◽  
F. Scholz ◽  
M. Hostalek ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 97 (1) ◽  
pp. 013502 ◽  
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Shang-Ju Tu ◽  
Chih-Ciao Yang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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