Tight-binding theory of quantum-dot quantum wells: Single-particle effects and near-band-edge structure

2003 ◽  
Vol 67 (20) ◽  
Author(s):  
Garnett W. Bryant ◽  
W. Jaskólski
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Single Particle ◽  
Tight Binding ◽  
Band Edge ◽  
Near Band Edge ◽  
Binding Theory ◽  
Edge Structure

scholarly journals Tunnel-Coupled Quantum Dots: Atomistic Theory of Quantum Dot Molecules and Arrays

2002 ◽  
Vol 737 ◽  
Author(s):  
Garnett W. Bryant ◽  
Javier Aizpurua ◽  
W. Jaskolski ◽  
Michal Zielinski
Keyword(s):  
Quantum Dot ◽  
Tight Binding ◽  
Atomic State ◽  
Atomic Scale ◽  
Binding Theory ◽  
Electron States ◽  
Quantum Dot Molecules ◽  
Artificial Molecule ◽  
Self Assembled ◽  
Envelope Functions

ABSTRACTAn understanding of how dots couple in quantum dot molecules and arrays is needed so that the possibilities for tailored nanooptics in these systems can be explored. The properties of tunnel-coupled dots will be determined by how the dots couple through atomic-scale junctions. We present an atomistic empirical tight-binding theory of coupled, CdS nanocrystal artificial-molecules, vertically and laterally coupled InAs/GaAs self-assembled dots, and arrays of InAs/GaAs self-assembled dots. Electron states follow the artificial molecule analogy. The coupling of hole states is much more complex. There are significant departures from the artificial molecule analogy because the interdot hole coupling is determined by the hole envelope functions, as for the electron states, and by the hole atomic state near interdot interfaces.

Effects of interdiffusion on the sub‐band‐edge structure of In0.53Ga0.47As/InP single quantum wells

1993 ◽  
Vol 73 (11) ◽  
pp. 7524-7532 ◽  
Author(s):  
Joseph Micallef ◽  
E. Herbert Li ◽  
Bernard L. Weiss
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Single Quantum ◽  
Edge Structure

II-VI semiconductor quantum dot quantum wells: a tight-binding study

2006 ◽  
Vol 203 (6) ◽  
pp. 1182-1187 ◽  
Author(s):  
J. Pérez-Conde ◽  
A. K. Bhattacharjee
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Tight Binding ◽  
Binding Study ◽  
Semiconductor Quantum Dot

Tight-binding description of the band-edge states in GaAs/AlAs quantum wells and superlattices

2000 ◽  
Vol 61 (19) ◽  
pp. 13021-13025 ◽  
Author(s):  
J. G. Menchero ◽  
T. G. Dargam ◽  
Belita Koiller
Keyword(s):  
Quantum Wells ◽  
Tight Binding ◽  
Band Edge ◽  
Edge States

scholarly journals Near band edge polarization dependence as a probe of structural symmetry in GaAs/AlGaAs quantum dot structures

1993 ◽  
Vol 62 (7) ◽  
pp. 756-758 ◽  
Author(s):  
T. Tanaka ◽  
J. Singh ◽  
Y. Arakawa ◽  
P. Bhattacharya
Keyword(s):  
Quantum Dot ◽  
Polarization Dependence ◽  
Band Edge ◽  
Near Band Edge ◽  
Structural Symmetry

Near Band-Edge Photoluminescence in Strained and Relaxed Si1-xGex/Si Quantum Wells

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1884-1888 ◽  
Author(s):  
Yu Yang ◽  
Shiji Jiang ◽  
Zihua Tian ◽  
Xinghui Wu ◽  
Chi Sheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Near Band Edge

scholarly journals Electron-hole correlations and optical excitonic gaps in quantum-dot quantum wells: Tight-binding approach

2002 ◽  
Vol 65 (23) ◽  
Author(s):  
Rui-Hua Xie ◽  
Garnett W. Bryant ◽  
Seungwon Lee ◽  
W. Jaskólski
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Tight Binding ◽  
Electron Hole
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