Near band-edge luminescence studies of the effect of interfacial step distribution and alloy disorder in ultrathin single quantum wells grown by MBE under RHEED determined conditions

1987 ◽  
Vol 3 (3) ◽  
pp. 313-323 ◽  
Author(s):  
F. Voillot ◽  
J.Y. Kim ◽  
W.C. Tang ◽  
A. Madhukar ◽  
P. Chen
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Near Band Edge ◽  
Single Quantum ◽  
Edge Luminescence ◽  
Band Edge Luminescence ◽  
Alloy Disorder

ChemInform Abstract: NEAR BAND-EDGE LUMINESCENCE IN ZINC SELENIDE GROWN FROM GALLIUM SOLUTION

1979 ◽  
Vol 10 (21) ◽  
Author(s):  
B. J. FITZPATRICK ◽  
R. N. BHARGAVA ◽  
S. P. HERKO ◽  
P. M. HARNACK
Keyword(s):  
Zinc Selenide ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

scholarly journals Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

2009 ◽  
Vol 129 (9) ◽  
pp. 1029-1031
Author(s):  
V.F. Kovalenko ◽  
S.V. Shutov ◽  
Ye.A. Baganov ◽  
M.M. Smyikalo
Keyword(s):  
Gallium Arsenide ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

Origin of the near-band-edge luminescence in MgxZn1−xO alloys

2010 ◽  
Vol 107 (1) ◽  
pp. 013704 ◽  
Author(s):  
Alexander Müller ◽  
Marko Stölzel ◽  
Christof Dietrich ◽  
Gabriele Benndorf ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

NEAR‐BAND‐EDGE LUMINESCENCE IN GaAs:Zn

1968 ◽  
Vol 13 (2) ◽  
pp. 51-53 ◽  
Author(s):  
George W. Arnold ◽  
David K. Brice
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

A Comparative Study of the Near Band Edge Luminescence of Epitaxial ZnSe:N Grown by MBE and MOVPE

2002 ◽  
Vol 229 (1) ◽  
pp. 333-337 ◽  
Author(s):  
A.L. Gurskii ◽  
H. Hamadeh ◽  
H. Kalisch ◽  
M. Heuken ◽  
G.P. Yablonskii ◽  
...  
Keyword(s):  
Comparative Study ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

Segregant-Assisted Growth of SiGe/Si Heterostructures and their Optical Properties

1993 ◽  
Vol 318 ◽  
Author(s):  
Y. Shiraki ◽  
S. Fukatsu ◽  
K. Fujita ◽  
T. Usami
Keyword(s):  
Quantum Wells ◽  
Surface Segregation ◽  
Quantum Confinement Effect ◽  
Growth Front ◽  
Band Edge ◽  
High Quality ◽  
Edge Luminescence ◽  
Band Edge Luminescence ◽  
A New Technique ◽  
Strong Segregation

ABSTRACTA method to realize high quality SiGe/Si heterostructures where surface segregation seriously deteriorates the interface integrity is discussed. After clarifying the mechanism of surface segregation, a new technique, called segre-gant-assisted growth (SAG), where atoms having a strong segregation tendency are introduced at heterointerfaces is proposed and its advantages are demonstrated. Intersubband transition of electrons in the conduction band can be clearly observed even in narrow quantum wells (QWs), and the well width dependence reflecting the square shape potential is obtained in the absorption peak energy. Gas source MBE (GSMBE), which is considered to be quasi-SAG with hydrogen generated at the growth front acting as a segregant, is shown to provide high quality SiGe/Si heterostructures with abrupt interfaces. Highly efficient band edge luminescence is observed in the QWs grown by the SAG method, especially by GSMBE, and the quantum confinement effect is confirmed. Electroluminescent diodes providing band edge luminescence are fabricated by this method, suggesting a high potential for SiGe/Si heterostrucutres in device applications.

Sign in / Sign up

Export Citation Format

Share Document