Variation of core-ring structures of quantum dots and the magic angular momenta in the region of intermediate particle number

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
Gang-Ming Huang ◽  
Yi-Min Liu ◽  
C. G. Bao
2009 ◽  
Vol 6 (4) ◽  
pp. 928-931 ◽  
Author(s):  
S. Bietti ◽  
C. Somaschini ◽  
M. Abbarchi ◽  
N. Koguchi ◽  
S. Sanguinetti ◽  
...  

1996 ◽  
Vol 53 (23) ◽  
pp. 15810-15814 ◽  
Author(s):  
M. Bayer ◽  
O. Schilling ◽  
A. Forchel ◽  
T. L. Reinecke ◽  
P. A. Knipp ◽  
...  

2000 ◽  
Vol 17 (10) ◽  
pp. 752-754
Author(s):  
Ruan Wen-Ying ◽  
Oi Quan ◽  
Chen Guo-Sen ◽  
He Hao-Pei ◽  
Pan Yu-Bin

2009 ◽  
Vol 467 (4-6) ◽  
pp. 365-368 ◽  
Author(s):  
Sougata Pal ◽  
Rahul Sharma ◽  
Biplab Goswami ◽  
Pranab Sarkar

2016 ◽  
Vol 57 (12) ◽  
pp. 1103-1126 ◽  
Author(s):  
V. M. Kuleshov ◽  
V. D. Mur ◽  
N. B. Narozhny ◽  
Yu. E. Lozovik

2006 ◽  
Vol 959 ◽  
Author(s):  
Nobuyuki Koguchi

ABSTRACTWe have proposed a novel self-assembling growth method, termed Droplet Epitaxy, for the direct formation of QDs without using any lithography in 1990. Compared with the island formation based on the Stranski-Krastanow growth mode, the Droplet Epitaxy is applicable to the formation of quantum dots not only in lattice-mismatched but also in lattice-matched systems such as GaAs/AlGaAs. The process of the Droplet Epitaxy in MBE chamber consists of forming numerous III-column element droplets such as Ga or InGa with homogeneous size of around 10 nm on the substrate surface first by supplying their molecular beams, and then reacting the droplets with As molecular beam to produce GaAs or InGaAs epitaxial microcrystals. Another advantage of the Droplet Epitaxy is the possibility of the fabrication of QDs structures without wetting layer by cotrolling the stoichiometry of the substrate surface just before the deposition of III-column element droplets. Also we can control the shape of the QDs structure self-organizingly such as pyramidal shape, single-ring shape and concentric double-ring shape. These ring structures will provide excellent possibilities for the investigation of quantum topological phenomena.


1995 ◽  
Vol 74 (17) ◽  
pp. 3439-3442 ◽  
Author(s):  
M. Bayer ◽  
A. Schmidt ◽  
A. Forchel ◽  
F. Faller ◽  
T. L. Reinecke ◽  
...  

1995 ◽  
Vol 51 (12) ◽  
pp. 7942-7945 ◽  
Author(s):  
W. Y. Ruan ◽  
Y. Y. Liu ◽  
C. G. Bao ◽  
Z. Q. Zhang

2006 ◽  
Vol 518 ◽  
pp. 51-56
Author(s):  
Dj. Veljković ◽  
M. Tadić ◽  
F.M. Peeters

Exciton states in type-II InP/InGaP and GaSb/GaAs self-assembled quantum dots and quantum-dot superlattices subject to a normal magnetic field are calculated. Strain is explicitly taken into account in single particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Strain reverts type II band alignment in InP quantum dots to type I, therefore no transitions between the lowest energy states of different angular momenta are observed. On the other hand, strain increases the barrier for the electron in the conduction band of GaSb/GaAs quantum dots, therefore the exciton, being composed of electron and hole states of various angular momenta, may have a finite angular momentum in the ground state. Consequently, the oscillator strength in the InP single quantum dot and quantum-dot superlattice increases with the magnetic field, while the angular momentum transitions between the bright and the dark exciton states in the GaSb system bring about decay of the oscillator strength when the magnetic field exceeds a certain value.


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