Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupledInxGa1−xN∕GaNmultiple and single quantum wells

2007 ◽  
Vol 75 (3) ◽  
Author(s):  
S. Khatsevich ◽  
D. H. Rich ◽  
S. Keller ◽  
S. P. DenBaars
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Time Resolved ◽  
Carrier Relaxation ◽  
Relaxation Transfer ◽  
Cathodoluminescence Study

Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques

1997 ◽  
Vol 3 (3) ◽  
pp. 731-738 ◽  
Author(s):  
Chi-Kuang Sun ◽  
S. Keller ◽  
Tien-Lung Chiu ◽  
G. Wang ◽  
M.S. Minsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

1997 ◽  
Vol 71 (4) ◽  
pp. 425-427 ◽  
Author(s):  
C.-K. Sun ◽  
T.-L. Chiu ◽  
S. Keller ◽  
G. Wang ◽  
M. S. Minsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Single Quantum ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Temperature Dependent and Time Resolved Optical Studies of Single Quantum Wells Produced by Interrupted Growth MBE

1986 ◽  
Vol 77 ◽  
Author(s):  
B. S. Elman ◽  
Emil S. Koteles ◽  
C. Jagannath ◽  
Y. J. Chen ◽  
S. Charbonneau ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Molecular Beam Epitaxial ◽  
Decay Times ◽  
Higher Temperature ◽  
The Individual ◽  
Molecular Beam Epitaxial Growth

ABSTRACTMultiple peaks, recently observed in the low temperature photoluminescence (PL) spectra of GaAs/AlGaAs single quantum wells fabricated by momentarily interrupting the molecular beam epitaxial growth between adjacent but different semiconductor layers, have been interpreted as originating within smooth regions in the quantum well layer differing in width by exactly one monolayer. We have observed similar structure in similarly grown samples but find that low temperature PL can be misleading. However, higher temperature PL or PL excitation spectroscopy do provide unambiguous evidence for the model of interface smoothing due to growth interruption. Further, time-resolved spectra yield decay times of the individual peaks which are consistent with this idea.

Preparation and Time-Resolved Photoluminescence Study of CdTe/Cd1-xMnxTe Single Quantum Wells

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L226-L228 ◽  
Author(s):  
Hiroyuki Akinaga ◽  
Yutaka Shirai ◽  
Kôki Takita ◽  
Takeshi Nakayama ◽  
Fujio Minami ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence and steady-state optical studies of GaInNAs and GaInAs single quantum wells

2007 ◽  
Vol 4 (2) ◽  
pp. 667-670 ◽  
Author(s):  
Y. Sun ◽  
L. Lombez ◽  
P. F. Braun ◽  
B. Ulug ◽  
A. Ulug ◽  
...  
Keyword(s):  
Steady State ◽  
Quantum Wells ◽  
Single Quantum ◽  
Optical Studies ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time‐resolved cathodoluminescence study of carrier relaxation in GaAs/AlGaAs layers grown on a patterned GaAs(001) substrate

1996 ◽  
Vol 69 (5) ◽  
pp. 665-667 ◽  
Author(s):  
D. H. Rich ◽  
H. T. Lin ◽  
A. Konkar ◽  
P. Chen ◽  
A. Madhukar
Keyword(s):  
Time Resolved ◽  
Carrier Relaxation ◽  
Cathodoluminescence Study
Sign in / Sign up

Export Citation Format

Share Document