Effects of oxygen impurity on the energy distribution of gap states in hydrogenated amorphous silicon studied by post-transit photocurrent spectroscopy

2007 ◽  
Vol 76 (7) ◽  
Author(s):  
I. Sakata ◽  
T. Kamei ◽  
M. Yamanaka
Keyword(s):  
Energy Distribution ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Oxygen Impurity ◽  
Photocurrent Spectroscopy ◽  
Gap States ◽  
Hydrogenated Amorphous

Stability in Amorphous Silicon

1987 ◽  
Vol 95 ◽  
Author(s):  
Z E. Smith ◽  
S. Wagner
Keyword(s):  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Recovery ◽  
Defect States ◽  
Spin Resonance ◽  
Resonance Data ◽  
Electron Spin Resonance Data ◽  
Gap States ◽  
Hydrogenated Amorphous

AbstractThe experimental phenomena associated with light-induced degradation and thermal recovery of hydrogenated amorphous silicon (a-Si:H) films are reviewed, with special emphasis on the limitations of each experimental technique. When several techniques are used in concert, a fuller picture emerges. Recent experiments suggest different positions in the band-gap of the paramagnetic-associated defect states (the dangling bonds) for doped and undopedfilms; this information can be combined with conductivity, sub-bandgap optical absorption and electron spin resonance data to yield a model for the density of gap states (DOS) in a- Si:H, including how the DOS changes upon illumination and annealing.

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