Stability in Amorphous Silicon
Keyword(s):
AbstractThe experimental phenomena associated with light-induced degradation and thermal recovery of hydrogenated amorphous silicon (a-Si:H) films are reviewed, with special emphasis on the limitations of each experimental technique. When several techniques are used in concert, a fuller picture emerges. Recent experiments suggest different positions in the band-gap of the paramagnetic-associated defect states (the dangling bonds) for doped and undopedfilms; this information can be combined with conductivity, sub-bandgap optical absorption and electron spin resonance data to yield a model for the density of gap states (DOS) in a- Si:H, including how the DOS changes upon illumination and annealing.
2001 ◽
Vol 40
(Part 1, No. 1)
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pp. 54-58
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2002 ◽
Vol 41
(Part 1, No. 5A)
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pp. 2829-2833
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1987 ◽
Vol 56
(4)
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pp. 161-163
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1990 ◽
Vol 65
(6)
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pp. 756-759
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1989 ◽
Vol 114
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pp. 657-659
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1990 ◽