Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

2010 ◽  
Vol 82 (10) ◽  
Author(s):  
R. R. Jia ◽  
J. C. Zhang ◽  
R. K. Zheng ◽  
D. M. Deng ◽  
H.-U. Habermeier ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Quantum Correction ◽  
Temperature Resistivity

Strain-inhomogeneity effect on magnetization and low-temperature resistivity of epitaxial Fe(001) thin films

2004 ◽  
Vol 268 (1-2) ◽  
pp. 24-28 ◽  
Author(s):  
Z. Sefrioui ◽  
J.L. Menéndez ◽  
A. Cebollada ◽  
F. Briones ◽  
A. Hernando
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Strain Inhomogeneity ◽  
Temperature Resistivity

Low temperature resistivity of heavily boron doped LPVCD polysilicon thin films

2008 ◽  
Vol 41 (16) ◽  
pp. 162002 ◽  
Author(s):  
S Žonja ◽  
M Očko ◽  
M Ivanda ◽  
P Biljanović
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Boron Doped ◽  
Temperature Resistivity

Anomalous low temperature resistivity and Hall effects in GdCo amorphous thin films

Physica B+C ◽  
1981 ◽  
Vol 107 (1-3) ◽  
pp. 511-512
Author(s):  
Han Shun-hui ◽  
Chen Le-qun ◽  
Wang Zhong-quan ◽  
Wang Yin-jun
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Amorphous Thin Films ◽  
Hall Effects ◽  
Temperature Resistivity

Low-temperature resistivity anomaly and weak spin disorder in Co2MnGa epitaxial thin films

2020 ◽  
Vol 101 (18) ◽  
Author(s):  
Shucheng Tong ◽  
Xupeng Zhao ◽  
Dahai Wei ◽  
Jianhua Zhao
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Thin Films ◽  
Spin Disorder ◽  
Temperature Resistivity

Influence of the interface in quantum corrections on the low-temperature resistance of La2/3Sr1/3MnO3 trilayer masking thin films

2015 ◽  
Vol 17 (19) ◽  
pp. 12826-12832 ◽  
Author(s):  
Yuan Jin ◽  
Xiao-Peng Cui ◽  
Wei-Hua Han ◽  
Shi-Xun Cao ◽  
Yu-Ze Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Quantum Correction ◽  
Weak Localization ◽  
Quantum Corrections ◽  
Electron Interaction ◽  
Strongly Correlated ◽  
Temperature Resistance ◽  
Low Temperature Resistance

We report the low temperature resistance upturn is mainly due to the quantum correction effects driven by the weak localization and the electron–electron interaction in such a strongly correlated system, and the contribution of each factor varies with grain boundaries.

Quantum correction to low-temperature resistivity induced by disorder in La2/3Sr1/3MnO3–ZrO2 matrix composites

RSC Advances ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 2354-2359 ◽  
Author(s):  
Yuan Jin ◽  
Xiao-Long Qian ◽  
Bo Lu ◽  
Shi-Xun Cao ◽  
Jin-Cang Zhang
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Transport Properties ◽  
Quantum Correction ◽  
Matrix Composites ◽  
Temperature Resistivity

Low-temperature transport properties were systemically studied for a series of (1 − x) La2/3Sr1/3MnO3 + xZrO2 (x = 0%, 3%, 6%, and 9%) matrix composites under low applied magnetic fields.

Low-temperature resistivity ofLa0.7Sr0.3MnO3ultra thin films: Role of quantum interference effects

2006 ◽  
Vol 73 (9) ◽  
Author(s):  
L. Maritato ◽  
C. Adamo ◽  
C. Barone ◽  
G. M. De Luca ◽  
A. Galdi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Quantum Interference ◽  
Interference Effects ◽  
Temperature Resistivity
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