scholarly journals 3dtransition metal impurities in diamond: Electronic properties and chemical trends

2011 ◽  
Vol 84 (15) ◽  
Author(s):  
L. V. C. Assali ◽  
W. V. M. Machado ◽  
J. F. Justo
Keyword(s):  
Electronic Properties ◽  
Metal Impurities ◽  
Chemical Trends

Nanoscale magnetism and novel electronic properties of a bilayer bismuth(111) film with vacancies and chemical doping

2016 ◽  
Vol 18 (30) ◽  
pp. 20550-20561 ◽  
Author(s):  
M. P. K. Sahoo ◽  
Yajun Zhang ◽  
Jie Wang
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
Chemical Doping ◽  
Metal Impurities ◽  
Transition Metal Impurities

A single Bi(111) bilayer with defects and transition metal impurities.

Electronic properties and chemical trends of the arsenicin situimpurities inHg1−xCdxTe: First-principles study

2007 ◽  
Vol 76 (4) ◽  
Author(s):  
L. Z. Sun ◽  
Xiaoshuang Chen ◽  
Jijun Zhao ◽  
J. B. Wang ◽  
Y. C. Zhou ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
First Principles Study ◽  
Chemical Trends

Chemical Trends in Electronic Properties of Gold-3D Transition Metal Impurity Pairs in Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
J. F. Justo ◽  
L. V. C. Assali
Keyword(s):  
Transition Metal ◽  
Metal Complexes ◽  
Electronic Properties ◽  
Transition Metal Complexes ◽  
Metal Impurity ◽  
Trigonal Symmetry ◽  
Transition Metal Impurity ◽  
Theoretical Investigations ◽  
Stable Pairs ◽  
Chemical Trends

ABSTRACTWe report theoretical investigations of the chemical trends in the electronic properties of substitutional gold-interstitial transition-metal complexes in silicon. The results show that the stable pairs in trigonal symmetry are formed by a covalent mechanism which includes, besides Au and TM impurities, also the Si neighbors, rather than being derived from interactions between two electrostatically bound point charges.

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