Coupling of the angular momentum density with magnetic moments explains the intrinsic anomalous Hall effect

2013 ◽  
Vol 88 (16) ◽  
Author(s):  
L. Bellaiche ◽  
Wei Ren ◽  
Surendra Singh
2021 ◽  
Author(s):  
Oliver Dowinton ◽  
Mohammad Bahramy

Abstract Orbital angular momentum (OAM) plays a central role in regulating the magnetic state of electrons in non-periodic systems such as atoms and molecules. In solids, on the other hand, OAM is usually quenched by the crystal field, and thus, has a negligible effect on magnetisation. Accordingly, it is generally neglected in discussions around band topology such as Berry curvature (BC) and intrinsic anomalous Hall conductivity (AHC). Here, we present a theoretical framework demonstrating that crystalline OAM can be directionally unquenched in transition metal oxides via energetic proximity of the conducting d electrons to the local magnetic moments. We show that this leads to `composite' Fermi-pockets with topologically non-trivial OAM textures. This enables a giant Berry curvature with an intrinsic non-monotonic AHC, even in collinearly-ordered spin states. We use this model to explain the origin of the giant AHC observed in the forced-ferromagnetic state of EuTiO3 and propose it as a prototype for OAM driven AHC.


2021 ◽  
Author(s):  
◽  
William Holmes-Hewett

<p>In this thesis we investigate the transport properties of SmN, NdN and GdN, members of the rare earth nitride series of intrinsic ferromagnetic semiconductors. GdN is the central member of the series with seven occupied majority spin 4f states and seven empty minority spin 4f states. Both the filled and unfilled 4f states are some few eV away from the conduction and valence band extrema, resulting in transport properties which are dominated by the extended Gd 5d band. The half filled 4f shell, with zero net orbital angular momentum, furthermore simplifies calculations and as such GdN is the most studied both experimentally and in theory. As one moves to lighter members, the filled 4f states become unfilled states in the conduction band and the 4f shell now has a net orbital angular momentum. Calculations concerning these members are now significantly more complicated, and as such there exists a wide range of predictions concerning the conduction band minima in the lighter rare earth nitrides. To inform the current theoretical and experimental literature we report on three studies concerning the transport properties of SmN, NdN and GdN.  To begin we report on the anomalous Hall effect in SmN, NdN and GdN. Under the symmetry of the rock-salt rare earth nitrides the magnitude of the anomalous Hall effect can imply the wave function of the conduction electron (i.e. d or f band). Measurements of the anomalous Hall effect in moderately doped samples are used to show the conduction channel in SmN and NdN is an f band or hybridised f/d band. Furthermore the sign of the anomalous Hall effect can be used to determine the orientation of the spin magnetic moment of the conduction electrons. Optical measurements of SmN, NdN and GdN films are then reported. Optical measurements provide a probe of the band structure of a material via direct transitions between the valence and conduction bands. Measurements of reflectivity and transmission on undoped SmN and NdN films were used to locate the unfilled majority spin 4f bands which form the conduction band minima in each material. Finally a preliminary study of heavily doped SmN, NdN and GdN is discussed. Structural measurements show a reduced lattice parameter while transport results find a significantly enhanced conductivity in heavily doped films. The Curie temperature is found to be enhanced and optical measurements show an increased absorption and red-shifted optical edge in doped films. The superconducting state of SmN is discussed and it is shown only to be present in moderately doped films, i.e. superconductivity is not present in undoped or degenerately doped SmN, within our measurement limits.</p>


2013 ◽  
Vol 110 (13) ◽  
Author(s):  
Aldo Raeliarijaona ◽  
Surendra Singh ◽  
Huaxiang Fu ◽  
L. Bellaiche

2021 ◽  
Author(s):  
◽  
William Holmes-Hewett

<p>In this thesis we investigate the transport properties of SmN, NdN and GdN, members of the rare earth nitride series of intrinsic ferromagnetic semiconductors. GdN is the central member of the series with seven occupied majority spin 4f states and seven empty minority spin 4f states. Both the filled and unfilled 4f states are some few eV away from the conduction and valence band extrema, resulting in transport properties which are dominated by the extended Gd 5d band. The half filled 4f shell, with zero net orbital angular momentum, furthermore simplifies calculations and as such GdN is the most studied both experimentally and in theory. As one moves to lighter members, the filled 4f states become unfilled states in the conduction band and the 4f shell now has a net orbital angular momentum. Calculations concerning these members are now significantly more complicated, and as such there exists a wide range of predictions concerning the conduction band minima in the lighter rare earth nitrides. To inform the current theoretical and experimental literature we report on three studies concerning the transport properties of SmN, NdN and GdN.  To begin we report on the anomalous Hall effect in SmN, NdN and GdN. Under the symmetry of the rock-salt rare earth nitrides the magnitude of the anomalous Hall effect can imply the wave function of the conduction electron (i.e. d or f band). Measurements of the anomalous Hall effect in moderately doped samples are used to show the conduction channel in SmN and NdN is an f band or hybridised f/d band. Furthermore the sign of the anomalous Hall effect can be used to determine the orientation of the spin magnetic moment of the conduction electrons. Optical measurements of SmN, NdN and GdN films are then reported. Optical measurements provide a probe of the band structure of a material via direct transitions between the valence and conduction bands. Measurements of reflectivity and transmission on undoped SmN and NdN films were used to locate the unfilled majority spin 4f bands which form the conduction band minima in each material. Finally a preliminary study of heavily doped SmN, NdN and GdN is discussed. Structural measurements show a reduced lattice parameter while transport results find a significantly enhanced conductivity in heavily doped films. The Curie temperature is found to be enhanced and optical measurements show an increased absorption and red-shifted optical edge in doped films. The superconducting state of SmN is discussed and it is shown only to be present in moderately doped films, i.e. superconductivity is not present in undoped or degenerately doped SmN, within our measurement limits.</p>


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.


2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  

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