scholarly journals Atomistic calculation of the thermoelectric properties of Si nanowires

2014 ◽  
Vol 90 (4) ◽  
Author(s):  
I. Bejenari ◽  
P. Kratzer
Keyword(s):  
Thermoelectric Properties ◽  
Si Nanowires ◽  
Atomistic Calculation

Nanograin Effects on the Thermoelectric Properties of Poly-Si Nanowires

2013 ◽  
Vol 42 (7) ◽  
pp. 2393-2401 ◽  
Author(s):  
N. Neophytou ◽  
X. Zianni ◽  
M. Ferri ◽  
A. Roncaglia ◽  
G. F. Cerofolini ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Si Nanowires

Growth mechanism and thermoelectric properties of β-FeSi2 matrix with Si nanowires

2011 ◽  
Vol 176 (16) ◽  
pp. 1291-1296 ◽  
Author(s):  
Xiurong Qu ◽  
Dechang Jia ◽  
Jianmin Hu ◽  
Shuchen Lü
Keyword(s):  
Thermoelectric Properties ◽  
Growth Mechanism ◽  
Si Nanowires

Theoretical Study on Thermoelectric Properties of Ge and Si Nanowires

2009 ◽  
Author(s):  
W. Huang ◽  
C. S. Koong ◽  
G. Liang
Keyword(s):  
Thermoelectric Properties ◽  
Theoretical Study ◽  
Si Nanowires

Enhancement of Thermoelectric Properties via Radial Dopant Inhomogeneity in B-doped Si Nanowires

2014 ◽  
Author(s):  
T. Yanagida ◽  
F. Zhuge ◽  
K. Nagashima ◽  
N. Fukata ◽  
K. Uchida
Keyword(s):  
Thermoelectric Properties ◽  
Si Nanowires

Synthesis and thermoelectric properties of the pseudo-binary skutterudites CoGe1.5Se1.5 and CoSn1.5Te1.5

2008 ◽  
Author(s):  
David Johnson ◽  
Qiyin Lin ◽  
Mary Smeller ◽  
Colby Heideman ◽  
Arwyn L. E. Smalley
Keyword(s):  
Thermoelectric Properties

Thermoelectric Properties of PbSr(Se,Te)-Based Low Dimensional Structures

2000 ◽  
Vol 626 ◽  
Author(s):  
Harald Beyer ◽  
Joachim Nurnus ◽  
Harald Böttner ◽  
Armin Lambrecht ◽  
Lothar Schmitt ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Evaluation Method ◽  
Interband Transition ◽  
Multiple Quantum Well ◽  
Calculated Data ◽  
Multiple Quantum ◽  
Ir Transmission ◽  
Low Dimensional

ABSTRACTThermoelectric properties of low dimensional structures based on PbTe/PbSrTe-multiple quantum-well (MQW)-structures with regard to the structural dimensions, doping profiles and levels are presented. Interband transition energies and barrier band-gap are determined from IR-transmission spectra and compared with Kronig-Penney calculations. The influence of the data evaluation method to obtain the 2D power factor will be discussed. The thermoelectrical data of our layers show a more modest enhancement in the power factor σS2 compared with former publications and are in good agreement with calculated data from Broido et al. [5]. The maximum allowed doping level for modulation doped MQW structures is determined. Thermal conductivity measurements show that a ZT enhancement can be achieved by reducing the thermal conductivity due to interface scattering. Additionally promising lead chalcogenide based superlattices for an increased 3D figure of merit are presented.

Structure and Thermoelectric Properties of New Quaternary Tin and Lead Bismuth Selenides, K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1+xSn5-xBi11+xSe22

2000 ◽  
Vol 626 ◽  
Author(s):  
Antje Mrotzek ◽  
Kyoung-Shin Choi ◽  
Duck-Young Chung ◽  
Melissa A. Lane ◽  
John R. Ireland ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Thermoelectric Properties ◽  
Three Dimensional ◽  
Structure Type ◽  
Narrow Gap ◽  
Low Thermal Conductivity ◽  
Seebeck Coefficients ◽  
Metal Atoms ◽  
Anionic Framework

ABSTRACTWe present the structure and thermoelectric properties of the new quaternary selenides K1+xM4–2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22. The compounds K1+xM4-2xBi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible “rattling” K+ ions.

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