The GaAs(001) surface is the most widely used gallium arsenide face in the MBE growth of multilayer electronic device structures. Various reconstructions on this face have been reported. They range from the As-rich (2×4) to the Ga-rich (4×2). The As-rich (2×4) surface is the most important one of these, since MBE growth usually starts and ends with this surface. A multislice formalism of Cowley & Moodie with a recently developed edge patching method has been applied to quantitative analyses of the RHEED patterns from MBE grown GaAs(001)-2×4 surfaces. The analyses are based on the ordering of visually estimated spot intensities of the observed RHEED patterns from the GaAs(001)-2×4 surfaces, which is similar to the approach used in early X-ray structure determinations. The surface structure has been proved to be a dimerized vacant 2×4 reconstruction with one dimer of every four missing, which is consistent with previous STM observations.
Surface structure determination of black phosphorus using photoelectron diffraction