Reorientation-effect measurement of the 〈21+∥Ê2∥21+〉 matrix element in Ar36

2021 ◽  
Vol 104 (6) ◽  
Author(s):  
J. N. Orce ◽  
E. J. Martín Montes ◽  
K. J. Abrahams ◽  
C. Ngwetsheni ◽  
B. A. Brown ◽  
...  
2012 ◽  
Vol 86 (4) ◽  
Author(s):  
J. N. Orce ◽  
T. E. Drake ◽  
M. K. Djongolov ◽  
P. Navrátil ◽  
S. Triambak ◽  
...  

Author(s):  
Ilwoo Jung ◽  
Byoungdeok Choi ◽  
Bonggu Sung ◽  
Daejung Kim ◽  
Ilgweon Kim ◽  
...  

Abstract Body effect is the key characteristic of DRAM cell transistor. Conventional method uses a TEG structure for body effect measurement. But this measurement is not accurate, because TEG structure has only several transistors and it is located outside of the DRAM die. This paper suggests a viable method for measuring DRAM cell transistor body effect. It uses a memory test system for fast, massive, nondestructive measurement. Newly developed method can measure 100,000 DRAM cell body effects in two minute, without sample damage. The test gives one median value and 100,000 individual values of body effects. Median value of measured body effects is equal to the TEG body effect. An individual DRAM cell body effect has a correlation with the fin height.


2021 ◽  
Vol 1009 ◽  
pp. 122156
Author(s):  
Hui-Xiao Duan ◽  
Dong-Hai Zhang ◽  
Fan Zhang ◽  
Hai-Shun Wu

2021 ◽  
Vol 2021 (7) ◽  
Author(s):  
Avital Dery ◽  
Mitrajyoti Ghosh ◽  
Yuval Grossman ◽  
Stefan Schacht

Abstract The K → μ+μ− decay is often considered to be uninformative of fundamental theory parameters since the decay is polluted by long-distance hadronic effects. We demonstrate that, using very mild assumptions and utilizing time-dependent interference effects, ℬ(KS → μ+μ−)ℓ=0 can be experimentally determined without the need to separate the ℓ = 0 and ℓ = 1 final states. This quantity is very clean theoretically and can be used to test the Standard Model. In particular, it can be used to extract the CKM matrix element combination $$ \mid {V}_{ts}{V}_{td}\sin \left(\beta +{\beta}_s\right)\mid \approx \mid {A}^2{\lambda}^5\overline{\eta}\mid $$ ∣ V ts V td sin β + β s ∣ ≈ ∣ A 2 λ 5 η ¯ ∣ with hadronic uncertainties below 1%.


2021 ◽  
Vol 129 (1) ◽  
pp. 015102
Author(s):  
Ryo Ogawa ◽  
Tatsunori Okada ◽  
Hideyuki Takahashi ◽  
Fuyuki Nabeshima ◽  
Atsutaka Maeda

2005 ◽  
Vol 86 (16) ◽  
pp. 161908 ◽  
Author(s):  
S. Shokhovets ◽  
G. Gobsch ◽  
O. Ambacher

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