Interface charge effect measurement in 2-μm-thick polypropylene sample under voltage with thermal method

2020 ◽  
Author(s):  
Celine Corbrion ◽  
Stephane Hole
Keyword(s):  
Effect Measurement ◽  
Thermal Method ◽  
Charge Effect ◽  
Interface Charge ◽  
Polypropylene Sample

New type electron gun with electrostatic and electromagnetic lenses

1978 ◽  
Vol 36 (1) ◽  
pp. 62-63
Author(s):  
T. Ichinokawa ◽  
H. Maeda
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Optimum Condition ◽  
Bias Voltage ◽  
Electron Gun ◽  
Charge Effect ◽  
Micro Fabrication ◽  
Maximum Brightness ◽  
New Type ◽  
The Ideal

I. IntroductionThermionic electron gun with the Wehnelt grid is popularly used in the electron microscopy and electron beam micro-fabrication. It is well known that this gun could get the ideal brightness caluculated from the Lengumier and Richardson equations under the optimum condition. However, the design and ajustment to the optimum condition is not so easy. The gun has following properties with respect to the Wehnelt bias; (1) The maximum brightness is got only in the optimum bias. (2) In the larger bias than the optimum, the brightness decreases with increasing the bias voltage on account of the space charge effect. (3) In the smaller bias than the optimum, the brightness decreases with bias voltage on account of spreading of the cross over spot due to the aberrations of the electrostatic immersion lens.In the present experiment, a new type electron gun with the electrostatic and electromagnetic lens is designed, and its properties are examined experimentally.

Interface-charge-coupled polarization response of Pt-ZnO-BaTiO3-ZnO-Pt heterostructures: Three-layer model expansion

2008 ◽  
Author(s):  
Venkata M. Voora ◽  
Tino Hofmann ◽  
Matthias Brandt ◽  
Michael Lorenz ◽  
Marius Grundmann ◽  
...  
Keyword(s):  
Layer Model ◽  
Interface Charge ◽  
Polarization Response ◽  
Model Expansion

Body Effect Measurement in DRAM Cell Transistor Using Memory Test System

2016 ◽  
Author(s):  
Ilwoo Jung ◽  
Byoungdeok Choi ◽  
Bonggu Sung ◽  
Daejung Kim ◽  
Ilgweon Kim ◽  
...  
Keyword(s):  
Conventional Method ◽  
Cell Body ◽  
Test System ◽  
Memory Test ◽  
Effect Measurement ◽  
Nondestructive Measurement ◽  
Individual Values ◽  
Body Effect ◽  
Sample Damage ◽  
Viable Method

Abstract Body effect is the key characteristic of DRAM cell transistor. Conventional method uses a TEG structure for body effect measurement. But this measurement is not accurate, because TEG structure has only several transistors and it is located outside of the DRAM die. This paper suggests a viable method for measuring DRAM cell transistor body effect. It uses a memory test system for fast, massive, nondestructive measurement. Newly developed method can measure 100,000 DRAM cell body effects in two minute, without sample damage. The test gives one median value and 100,000 individual values of body effects. Median value of measured body effects is equal to the TEG body effect. An individual DRAM cell body effect has a correlation with the fin height.

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