scholarly journals Polarization observables in the longitudinal basis for pseudo-scalar meson photoproduction using a density matrix approach

2011 ◽  
Vol 83 (5) ◽  
Author(s):  
Biplab Dey ◽  
Michael E. McCracken ◽  
David G. Ireland ◽  
Curtis A. Meyer
Keyword(s):  
Density Matrix ◽  
Scalar Meson ◽  
Matrix Approach ◽  
Meson Photoproduction ◽  
Polarization Observables ◽  
Pseudo Scalar

scholarly journals POLARIZATION OBSERVABLES FROM THE PHOTOPRODUCTION OF ω-MESONS USING LINEARLY POLARIZED PHOTONS

2014 ◽  
Vol 26 ◽  
pp. 1460103
Author(s):  
◽  
DANNY MARTINEZ ◽  
PHILIP L. COLE
Keyword(s):  
Density Matrix ◽  
Energy Region ◽  
Spin Density Matrix ◽  
Angular Distributions ◽  
Matrix Elements ◽  
Meson Photoproduction ◽  
Beam Asymmetry ◽  
Linearly Polarized ◽  
Polarization Observables ◽  
Polarized Photons

We report on the extraction of Polarization Observables Spin Density Matrix Elements (SDMEs), and Beam Asymmetry Σ for ω meson photoproduction using a beam of linearly polarized photons in the photon energy region of Eγ = 1.3 to 1.7 GeV, by means of the angular distributions of the daughter pions from ω decay. These preliminary results are from the g8b dataset, which were collected with the CLAS detector in Hall B of Jefferson Lab.

Few-Particle Effects in Nonlinear Optical Spectra of Semiconductor Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ulrich Hohenesteri ◽  
Fausto Rossi ◽  
Elisa Molinari
Keyword(s):  
Quantum Dots ◽  
Density Matrix ◽  
Nonlinear Optical ◽  
Coherent Control ◽  
Optical Spectra ◽  
Carrier Dynamics ◽  
Semiconductor Quantum Dots ◽  
Nonequilibrium Carrier ◽  
Optical Nonlinearities ◽  
Matrix Approach

ABSTRACTWe present a density-matrix approach for the description of nonequilibrium carrier dynamics in optically excited semiconductor quantum dots, that explicitly accounts for exciton-exciton as well as exciton-carrier interactions. Within this framework, we analyze few-particle effects in the optical spectra and provide a consistent description of additional peaks appearing at high photoexcitation density. We discuss possible applications of such optical nonlinearities in future coherent-control experiments.

Optical properties of Quantum Disks: Real density matrix approach

Open Physics ◽  
2006 ◽  
Vol 4 (2) ◽  
Author(s):  
Gerard Czajkowski ◽  
Leonardo Silvestri
Keyword(s):  
Density Matrix ◽  
Guided Wave ◽  
Matrix Approach ◽  
Electron Hole ◽  
Optical Functions ◽  
Quantum Disk ◽  
All Optical ◽  
Quantum Disks ◽  
Analytical Expressions ◽  
Real Density

AbstractWe show how to compute the optical response of a Quantum Disk (QDisk) to an electromagnetic wave as a function of the incident wave polarization, in the energetic region of interband transitions. Both the TM and TE polarization in guided-wave geometry are analyzed. The method uses the microscopic calculation of Quantum Disk eigenfunctions and the macroscopic real density matrix approach to compute the effective QDisk susceptibility, taking into account the valence band structure of the QDisk material and the Coulomb interaction between the electron and the hole. Analytical expressions for the QDisk susceptibility are obtained for a certain model electron — hole potential. Using these expressions, all optical functions can be computed. Results for the absorption coefficient are computed for InAs/GaAs QDisks. Fair agreement with experiments is obtained.

LINEAR AND NONLINEAR INTERSUBBAND REFRACTIVE INDEX CHANGES IN WURTZITEAlGaN/GaNDOUBLE QUANTUM WELLS: EFFECTS OF PIEZOELECTRICITY AND SPONTANEOUS POLARIZATION

2009 ◽  
Vol 16 (01) ◽  
pp. 11-17
Author(s):  
L. ZHANG
Keyword(s):  
Refractive Index ◽  
Density Matrix ◽  
Quantum Wells ◽  
Structural Parameters ◽  
Matrix Approach ◽  
Third Order ◽  
Numerical Result ◽  
Analytical Formulas ◽  
Index Changes ◽  
Linear And Nonlinear

Based on the density-matrix approach and iterative treatment, a detailed procedure for the calculation of the linear and nonlinear intersubband refractive index changes (RICs) in wurtzite GaN-based coupling quantum wells (CQWs) is given. The simple analytical formulas for electronic eigenstates and the linear and third-order nonlinear RICs in the systems are also deduced. Numerical result on a typical AlGaN / GaN CQW shows that the linear and nonlinear RICs sensitively depend on the structural parameters of the CQW system as well as the doped fraction of nitride semicondutor.

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