scholarly journals Experimental Realization of Robust Geometric Quantum Gates with Solid-State Spins

2019 ◽  
Vol 122 (1) ◽  
Author(s):  
Y.-Y. Huang ◽  
Y.-K. Wu ◽  
F. Wang ◽  
P.-Y. Hou ◽  
W.-B. Wang ◽  
...  
Keyword(s):  
Solid State ◽  
Quantum Gates ◽  
Experimental Realization

scholarly journals Experimental realization of universal geometric quantum gates with solid-state spins

Nature ◽  
2014 ◽  
Vol 514 (7520) ◽  
pp. 72-75 ◽  
Author(s):  
C. Zu ◽  
W.-B. Wang ◽  
L. He ◽  
W.-G. Zhang ◽  
C.-Y. Dai ◽  
...  
Keyword(s):  
Solid State ◽  
Quantum Gates ◽  
Experimental Realization

scholarly journals Decoherence-protected quantum gates for a hybrid solid-state spin register

Nature ◽  
2012 ◽  
Vol 484 (7392) ◽  
pp. 82-86 ◽  
Author(s):  
T. van der Sar ◽  
Z. H. Wang ◽  
M. S. Blok ◽  
H. Bernien ◽  
T. H. Taminiau ◽  
...  
Keyword(s):  
Solid State ◽  
Quantum Gates ◽  
State Spin

scholarly journals The experimental realization of high-fidelity ‘shortcut-to-adiabaticity’ quantum gates in a superconducting Xmon qubit

2018 ◽  
Vol 20 (6) ◽  
pp. 065003 ◽  
Author(s):  
Tenghui Wang ◽  
Zhenxing Zhang ◽  
Liang Xiang ◽  
Zhilong Jia ◽  
Peng Duan ◽  
...  
Keyword(s):  
Quantum Gates ◽  
High Fidelity ◽  
Experimental Realization

scholarly journals Optimal tuning of solid-state quantum gates: A universal two-qubit gate

2010 ◽  
Vol 81 (5) ◽  
Author(s):  
E. Paladino ◽  
A. Mastellone ◽  
A. D’Arrigo ◽  
G. Falci
Keyword(s):  
Solid State ◽  
Quantum Gates ◽  
Optimal Tuning ◽  
Qubit Gate

Synthesis and Characterization of Hf0.5Zr0.5O2 (HZO) Ceramic Target via Modified Solid-State Reaction Method

2021 ◽  
Vol 16 (5) ◽  
pp. 833-837
Author(s):  
Shin Kyu Lee ◽  
Sangmo Kim ◽  
Chung Wung Bark
Keyword(s):  
Solid State ◽  
Data Storage ◽  
Solid State Reaction ◽  
High Performance ◽  
Film Growth ◽  
Random Access ◽  
Solid State Reaction Method ◽  
Operating Characteristics ◽  
Research Attention ◽  
Experimental Realization

Ferroelectric random-access memory (FeRAM) is non-volatile, facilitates data storage via ferroelectricity, and it has attracted research attention as potential data storage means in high-performance computing applications. However, retention and fatigue problems have hampered its commercialization. Recently, the atomically controllable HfO2 FeRAM with high-density-storage capability has been developed. Although HfO2 is compatible with silicon-based fabrication technologies, its experimental realization is yet to be investigated. Thus, in this study, we have synthesized ZrO2-doped HfO2 (also referred to as Hf0.5Zr0.5O2 or HZO) with enhanced operating characteristics via a solid-state reaction and optimized ball-milling process. The HZO ceramic targets are sintered at different temperatures between 1000 °C and 1600 °C, and the influence of the sintering temperature on the HZO target properties is investigated. As observed, the HZO target sintered at 1600 °C optimum for film growth.

Experimental realization of Helicon Maser in magnetized solid-state plasma

2004 ◽  
Vol 346-347 ◽  
pp. 539-542 ◽  
Author(s):  
Zigmantas Jankauskas ◽  
Vygaudas Kvedaras ◽  
Laimis Laurinavicius
Keyword(s):  
Solid State ◽  
Experimental Realization ◽  
State Plasma

scholarly journals InP quantum dots for applications in laser devices and future solid-state quantum gates

2010 ◽  
Vol 245 ◽  
pp. 012077 ◽  
Author(s):  
E Koroknay ◽  
W-M Schulz ◽  
M Eichfelder ◽  
R Roßbach ◽  
M Jetter ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solid State ◽  
Quantum Gates ◽  
Laser Devices ◽  
Inp Quantum Dots
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