scholarly journals InP quantum dots for applications in laser devices and future solid-state quantum gates

2010 ◽  
Vol 245 ◽  
pp. 012077 ◽  
Author(s):  
E Koroknay ◽  
W-M Schulz ◽  
M Eichfelder ◽  
R Roßbach ◽  
M Jetter ◽  
...  
Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...


ACS Nano ◽  
2009 ◽  
Vol 3 (3) ◽  
pp. 502-510 ◽  
Author(s):  
Ken-Tye Yong ◽  
Hong Ding ◽  
Indrajit Roy ◽  
Wing-Cheung Law ◽  
Earl J. Bergey ◽  
...  

Nature ◽  
2012 ◽  
Vol 484 (7392) ◽  
pp. 82-86 ◽  
Author(s):  
T. van der Sar ◽  
Z. H. Wang ◽  
M. S. Blok ◽  
H. Bernien ◽  
T. H. Taminiau ◽  
...  
Keyword(s):  

2016 ◽  
Vol 4 (38) ◽  
pp. 9027-9035 ◽  
Author(s):  
Daqin Chen ◽  
Weiwei Wu ◽  
Yongjun Yuan ◽  
Yang Zhou ◽  
Zhongyi Wan ◽  
...  

Nitrogen-doped carbon dots with multi-state visible absorption and full-color blue/yellow/red emissions are synthesized, and show potential applications in solid-state-lighting.


2007 ◽  
Vol 06 (03n04) ◽  
pp. 215-219
Author(s):  
E. P. DOMASHEVSKAYA ◽  
V. A. TEREKHOV ◽  
V. M. KASHKAROV ◽  
S. YU. TURISHCHEV ◽  
S. L. MOLODTSOV ◽  
...  

Ultrasoft X-ray emission spectra (USXES) and X-ray absorption near-edge structure (XANES) spectra with the use of synchrotron radiation in the range of P L2,3-edges were obtained for the first time for nanostructures with InP quantum dots grown on GaAs 〈100〉 substrates by vapor-phase epitaxy from metal–organic compounds. These spectra represent local partial density of states in the valence and conduction bands. The additional XANES peak is detected; its intensity depends on the number of monolayers forming quantum dots. Assumptions are made on the band-to-band origin of luminescence spectra in the studied nanostructures.


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