scholarly journals Efficient Electrical Spin Splitter Based on Nonrelativistic Collinear Antiferromagnetism

2021 ◽  
Vol 126 (12) ◽  
Author(s):  
Rafael González-Hernández ◽  
Libor Šmejkal ◽  
Karel Výborný ◽  
Yuta Yahagi ◽  
Jairo Sinova ◽  
...  
Keyword(s):  
Electrical Spin

Robust electrical spin injection into a semiconductor heterostructure

2000 ◽  
Vol 62 (12) ◽  
pp. 8180-8183 ◽  
Author(s):  
B. T. Jonker ◽  
Y. D. Park ◽  
B. R. Bennett ◽  
H. D. Cheong ◽  
G. Kioseoglou ◽  
...  
Keyword(s):  
Spin Injection ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

scholarly journals Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure

2002 ◽  
Vol 81 (2) ◽  
pp. 265-267 ◽  
Author(s):  
V. F. Motsnyi ◽  
J. De Boeck ◽  
J. Das ◽  
W. Van Roy ◽  
G. Borghs ◽  
...  
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

scholarly journals Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

2002 ◽  
Vol 80 (7) ◽  
pp. 1240-1242 ◽  
Author(s):  
A. T. Hanbicki ◽  
B. T. Jonker ◽  
G. Itskos ◽  
G. Kioseoglou ◽  
A. Petrou
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Magnetic Metal ◽  
Electrical Spin

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

scholarly journals Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

2011 ◽  
Vol 84 (16) ◽  
Author(s):  
Kun-Rok Jeon ◽  
Byoung-Chul Min ◽  
Young-Hun Jo ◽  
Hun-Sung Lee ◽  
Il-Jae Shin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Electrical Spin

ALL-ELECTRICAL SPIN CONTROL IN A TRIPLE-TERMINAL QUANTUM DOTS RING: EFFECT OF THE INTERDOT COUPLING AND SPIN FLIP

2010 ◽  
Vol 24 (01) ◽  
pp. 97-107
Author(s):  
FENG CHI ◽  
JUN ZHENG ◽  
XIQIU YUAN
Keyword(s):  
Quantum Dots ◽  
Occupation Number ◽  
Electron Spin Polarization ◽  
Function Technique ◽  
Effective Coupling ◽  
Rashba Spin ◽  
Coupling Strengths ◽  
Electrical Spin ◽  
Interdot Coupling ◽  
Tunneling Coupling

The electron spin polarization in two quantum dots, which are inserted in one arm of a mesoscopic ring, is investigated by means of the non-equilibrium Keldysh Green's function technique. We find that the spin accumulations in the two dots Δni=ni↑-ni↓, where niσ is the spin-σ electron occupation number in dot i, can be efficiently tuned in terms of the applied bias voltage V, the interdot tunneling coupling strength tc and the phase induced by the Rashba spin-orbit interaction. By adjusting these parameters, Δn1 and Δn2 can be generated and manipulated either simultaneously or separately, which may have real usage in spintronics or quantum information devices. We interpret the origin of the spin accumulation in terms of the spin-dependent total effective coupling strengths between the leads and the dots.

scholarly journals Electrical spin injection and detection at Al2O3/n-type germanium interface using three terminal geometry

2011 ◽  
Vol 99 (16) ◽  
pp. 162102 ◽  
Author(s):  
A. Jain ◽  
L. Louahadj ◽  
J. Peiro ◽  
J. C. Le Breton ◽  
C. Vergnaud ◽  
...  
Keyword(s):  
Spin Injection ◽  
Electrical Spin ◽  
Spin Injection And Detection
Sign in / Sign up

Export Citation Format

Share Document