Transport Properties of a Three-Dimensional Van der Waals Fluid

1972 ◽  
Vol 28 (14) ◽  
pp. 882-885 ◽  
Author(s):  
P. Résibois ◽  
J. Piasecki ◽  
Y. Pomeau
Keyword(s):  
Transport Properties ◽  
Van Der Waals ◽  
Three Dimensional ◽  
Van Der Waals Fluid

On the transport properties of the van der Waals fluid. III. Explicit calculation of the shear viscosity

1977 ◽  
Vol 66 (4) ◽  
pp. 1422-1426 ◽  
Author(s):  
M. Napiorkowski ◽  
J. Piasecki ◽  
M. Seghers ◽  
P. Résibois
Keyword(s):  
Transport Properties ◽  
Shear Viscosity ◽  
Van Der Waals ◽  
Explicit Calculation ◽  
Van Der Waals Fluid

scholarly journals Superconducting contact and quantum interference between two-dimensional van der Waals and three-dimensional conventional superconductors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Michael R. Sinko ◽  
Sergio C. de la Barrera ◽  
Olivia Lanes ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Quantum Interference ◽  
Van Der Waals ◽  
Three Dimensional ◽  
Two Dimensional

Van der Waals Epitaxy of GaSe on GaAs(111)

1994 ◽  
Vol 340 ◽  
Author(s):  
L. E. Rumaner ◽  
F.S. Ohuchi
Keyword(s):  
Lattice Mismatch ◽  
Van Der Waals ◽  
Three Dimensional ◽  
Structured Materials ◽  
Lattice Matching ◽  
Molecular Beam Deposition ◽  
Crystal Films ◽  
Low Dimensional ◽  
Matching Constraints ◽  
Lattice Matched

ABSTRACTAlthough heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints. A new concept for fabricating material systems using the atomically abrupt and low dimensional nature of layered materials, called van der Waals epitaxy (VDWE), has been developed. GaSe (Eg = 2.1 eV) has been deposited on the three dimensional surface of GaAs (111) using a molecular beam deposition system. GaSe was evaporated from a single Knudsen source, impinging on a heated substrate. Even with a lattice mismatch of 6% between the substrate and the growing film, good quality single crystal films were grown as determined by RHEED. The films have further been analyzed using a complementary combination of XPS and X-ray reflectivity.

First-principles study on photoelectric and transport properties of CsXBr3 (X = Ge, Sn) and blue phosphorus van der Waals heterojunctions

2021 ◽  
Vol 129 (3) ◽  
pp. 035302
Author(s):  
Mengli Yao ◽  
Xiaojiao Zhang ◽  
Tian Wu ◽  
Biao Liu ◽  
Mingjun Li ◽  
...  
Keyword(s):  
Transport Properties ◽  
First Principles ◽  
Van Der Waals ◽  
First Principles Study
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