Energy Spectra and Charge States of H, He, and Heavy Ions Observed in the Earth's Magnetosheath and Magnetotail

Characteristics of two-element (PbMg) laser generated plasma ions were studied using a mass-spectrometer. It was found that increasing the fraction of Mg leads to widening of the energy spectra of Pb ions by more than a factor of two, while the intensity of Pb ions of all charge states does not depend on the Mg fraction. This effect is explained by the friction existing between light and heavy ions during their expansion away from the target.

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Continuous electron energy spectra ejected from solid carbon targets bombarded with light and heavy ions

Zeitschrift für Physik A Atoms and Nuclei ◽

10.1007/bf01409289 ◽

1975 ◽

Vol 275 (3) ◽

pp. 229-233 ◽

Cited By ~ 33

Author(s):

F. Folkmann ◽

K. O. Groeneveld ◽

R. Mann ◽

G. Nolte ◽

S. Schumann ◽

...

Keyword(s):

Electron Energy ◽

Heavy Ions ◽

Energy Spectra ◽

Solid Carbon

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Charge states of relativistic heavy ions in matter

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(98)00244-4 ◽

1998 ◽

Vol 142 (4) ◽

pp. 441-462 ◽

Cited By ~ 151

Author(s):

C Scheidenberger ◽

Th Stöhlker ◽

W.E Meyerhof ◽

H Geissel ◽

P.H Mokler ◽

...

Keyword(s):

Heavy Ions ◽

Relativistic Heavy Ions ◽

Charge States

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Neutron energy spectra produced from thick targets by light-mass heavy ions

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/0168-9002(85)90629-1 ◽

1985 ◽

Vol 240 (2) ◽

pp. 207-215 ◽

Cited By ~ 11

Author(s):

Takashi Nakamura

Keyword(s):

Neutron Energy ◽

Heavy Ions ◽

Energy Spectra

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Charge States of Heavy Ions with Energy in the MeV Range in Crystalline Semiconductor Targets

MRS Proceedings ◽

10.1557/proc-157-293 ◽

1989 ◽

Vol 157 ◽

Author(s):

A.M. Mazzone

Keyword(s):

Monte Carlo Simulation ◽

Gallium Arsenide ◽

Monte Carlo ◽

Heavy Ions ◽

Random Orientation ◽

Crystalline Semiconductor ◽

Charge States

ABSTRACTIn this work a formalism for the evaluation of electronic losses of heavy ions with energy of few MeV in crystalline semiconductor targets is presented. The stopping values are used in a Monte Carlo simulation to calculate the ion range in silicon and in gallium arsenide for a random orientation of the target and under channelling conditions.

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