Charge States of Heavy Ions with Energy in the MeV Range in Crystalline Semiconductor Targets

1989 ◽  
Vol 157 ◽  
Author(s):  
A.M. Mazzone
Keyword(s):  
Monte Carlo Simulation ◽  
Gallium Arsenide ◽  
Monte Carlo ◽  
Heavy Ions ◽  
Random Orientation ◽  
Crystalline Semiconductor ◽  
Charge States

ABSTRACTIn this work a formalism for the evaluation of electronic losses of heavy ions with energy of few MeV in crystalline semiconductor targets is presented. The stopping values are used in a Monte Carlo simulation to calculate the ion range in silicon and in gallium arsenide for a random orientation of the target and under channelling conditions.

Electronic Stopping Powers of Formvar and Mylar Polymeric Materials for Heavy Ions: LSS Modified Theory and Monte Carlo Simulation

2019 ◽  
Vol 205 (9) ◽  
pp. 1236-1244
Author(s):  
J. El Asri ◽  
O. El Bounagui ◽  
N. Tahiri ◽  
H. Erramli ◽  
A. Chetaine
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Heavy Ions ◽  
Polymeric Materials ◽  
Modified Theory

scholarly journals FEATURES OF GALLIUM ARSENIDE SURFACE RELIEF EVOLUTION DURING ANNEALING (MONTE CARLO SIMULATION)

2021 ◽  
Author(s):  
Nataliya Shwartz ◽  
Anna Spirina
Keyword(s):  
Monte Carlo Simulation ◽  
Gallium Arsenide ◽  
Monte Carlo ◽  
High Temperature ◽  
Surface Relief ◽  
Surface Defects ◽  
High Temperature Annealing ◽  
Morphological Transformations

In this work, simulation of high-temperature annealing of GaAs (111) substrates has been carried out. The dependences of the substrate morphological transformations on the temperature and the presence of surface defects are analyzed.

Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions

2013 ◽  
Vol 56 (6) ◽  
pp. 1120-1125 ◽  
Author(s):  
Chao Geng ◽  
Jie Liu ◽  
ZhanGang Zhang ◽  
MingDong Hou ◽  
YouMei Sun ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Heavy Ions ◽  
Single Event Upset ◽  
Single Event ◽  
Simulation Based

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

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