New configuration-coordinate model for the ground, excited, and metastable states ofEL2in GaAs

1987 ◽  
Vol 59 (5) ◽  
pp. 590-593 ◽  
Author(s):  
Yasunori Mochizuki ◽  
Toshiaki Ikoma
1989 ◽  
Vol 163 ◽  
Author(s):  
S. Banerjee ◽  
A.K. Srivastava ◽  
B.M. Arora

AbstractThe phonon features in the deep level luminescence (PL) bands related to Fe and Mn and native defects in InP have been clearly identified and the lineshape of the bands are analysed using configuration coordinate model. A consistent set of phonon parameters are determined for the first time.


1987 ◽  
Vol 104 ◽  
Author(s):  
B. M. Arora ◽  
S. Chakravarty ◽  
S. S. Chandvankar ◽  
R. Rajalakshmi ◽  
A. K. Srivastava

ABSTRACTGermanium doping of InGaAsP epitaxial layers grown by liquid phase epitaxy produces n type conduction with a net distribution coefficient KGe∼ 5×10-3. In addition, Ge doping introduces a broad band (∼0.2eV) of efficient luminescence which is red shifted with respect to the band edge. The intensity of this band grows with increasing Ge concentration. In all the samples, the integrated intensity of the broad band varies relatively less in the temperature range 15K to about 90K. At higher temperatures, the intensity falls exponentially with an activation energy of 0.05 - 0.07 eV. The emission spectra are compared with the configuration-coordinate model of the emission from a Ge related complex.


2019 ◽  
Vol 100 (15) ◽  
Author(s):  
Yongchao Jia ◽  
Samuel Poncé ◽  
Anna Miglio ◽  
Masayoshi Mikami ◽  
Xavier Gonze

1973 ◽  
Vol 77 (2) ◽  
pp. 263-268 ◽  
Author(s):  
M. Tachiya ◽  
Y. Tabata ◽  
K. Oshima

1960 ◽  
Vol 117 (4) ◽  
pp. 964-969 ◽  
Author(s):  
P. D. Johnson ◽  
F. E. Williams

1971 ◽  
Vol 55 (11) ◽  
pp. 5357-5362 ◽  
Author(s):  
P. W. M. Jacobs ◽  
A. Krishna Menon

Sign in / Sign up

Export Citation Format

Share Document