Tuning network topology and vibrational mode localization to achieve ultralow thermal conductivity in amorphous chalcogenides

Amorphous chalcogenide alloys are key materials for data storage and energy scavenging applications due to their large non-linearities in optical and electrical properties as well as low vibrational thermal conductivities. Here, we report on a mechanism to suppress the thermal transport in a representative amorphous chalcogenide system, silicon telluride (SiTe), by nearly an order of magnitude via systematically tailoring the cross-linking network among the atoms. As such, we experimentally demonstrate that in fully dense amorphous SiTe the thermal conductivity can be reduced to as low as 0.10 ± 0.01 W m−1 K−1 for high tellurium content with a density nearly twice that of amorphous silicon. Using ab-initio simulations integrated with lattice dynamics, we attribute the ultralow thermal conductivity of SiTe to the suppressed contribution of extended modes of vibration, namely propagons and diffusons. This leads to a large shift in the mobility edge - a factor of five - towards lower frequency and localization of nearly 42% of the modes. This localization is the result of reductions in coordination number and a transition from over-constrained to under-constrained atomic network.

Light-Induced Effects in Amorphous Chalcogenide Glasses: Femtoseconds to Seconds

Amorphous chalcogenide glasses are intrinsically metastable, highly photosensitive, and therefore exhibit numerous light-induced effects upon bandgap and sub-bandgap illumination. Depending on the pulse duration of the excitation laser, ChGs exhibit a series of light-induced effects spanning over femtosecond to seconds time domain. For continuous wave (CW) illumination, the effects are dominantly metastable in terms of photodarkening (PD) and photobleaching (PB) that take place via homopolar to heteropolar bond conversion. On the other hand, under nanosecond and ultrafast pulsed illumination, ChGs exhibit transient absorption (TA) that is instigated from the transient bonding rearrangements through self-trapped exciton recombination. In the first part of the review, we pay special attention to continuous wave light-induced PD and PB, while in the second part we will focus on the TA and controlling such effects via internal and external parameters, e.g., chemical composition, temperature, sample history, etc.

Lightinduced Effects in Amorphous Chalcogenide Glasses: Femtoseconds to Seconds

Amorphous chalcogenide (ChGs) glasses are intrinsically metastable, highly photosensitive, and therefore exhibit numerous lightinduced effects upon bandgap and sub-bandgap illumination. Depending on the pulse duration of the excitation laser, ChGs exhibit a series of lightinduced effects spanning over femtosecond to seconds time domain. For continuous wave illumination, the effects are dominantly metastable in terms of photodarkening (PD) and photobleaching (PB) that takes place via homopolar to heteropolar bond conversion. On the other hand, under nanosecond and ultrafast pulsed illumination, ChGs exhibit transient absorption (TA) that is instigated from the transient bonding rearrangements through self-trapped exciton recombination. In the first part of the review, we pay special attention to continuous wave lightinduced PD and PB, while in the second part we will focus on the TA and controlling such effects via internal and external parameters e.g., chemical composition, temperature, sample history etc.

Ultralow thermal conductivity via topological network control of vibrational localization in amorphous chalcogenides

Amorphous chalcogenide alloys are key materials for data storage and energy scavenging applications due to their large non-linearities in optical and electrical properties as well as low vibrational thermal conductivities. Here, we report on a mechanism to suppress the thermal transport in a representative amorphous chalcogenide system, silicon telluride (SiTe), by nearly an order of magnitude via systematically tailoring the cross-linking network among the atoms. As such, we experimentally demonstrate that in fully dense amorphous SiTe the thermal conductivity can be reduced to as low as 0.1 ± 0.01 W/m/K for high tellurium content with a density nearly twice that of amorphous silicon. Using ab-initio simulations integrated with lattice dynamics, we attribute the ultralow thermal conductivity of SiTe to the suppressed contribution of extended modes of vibration, namely propagons and diffusons. This leads to a large shift in the mobility edge - a factor of five - towards lower frequency and localization of nearly 42% of the modes. This localization is the result of reductions in coordination number and a transition from over-constrained to underconstrained atomic network.

PE-ALD of Ge1-xSx amorphous chalcogenide alloys for OTS applications

Three-dimensional (3D) cross-point (X-point) technology, including amorphous chalcogenide-based ovonic threshold switching (OTS) selectors, is bringing new changes to the memory hierarchy for high-performance computing systems. To prepare for future 3D...

In situ laser irradiation: the kinetics of the changes in the nonlinear/linear optical parameters of As50Se40Sb10 thin films for photonic applications

The photosensitivity of amorphous chalcogenide thin films brings out light-induced changes in the nonlinear and linear optical parameters upon sub-bandgap and bandgap laser irradiation.