Achievement of well conducting wide band-gap semiconductors: Role of solubility and of nonequilibrium impurity incorporation

1989 ◽  
Vol 62 (15) ◽  
pp. 1800-1803 ◽  
Author(s):  
G. F. Neumark
2016 ◽  
Vol 93 (20) ◽  
Author(s):  
Audrius Alkauskas ◽  
Cyrus E. Dreyer ◽  
John L. Lyons ◽  
Chris G. Van de Walle

1991 ◽  
Vol 66 (5) ◽  
pp. 648-651 ◽  
Author(s):  
D. B. Laks ◽  
C. G. Van de Walle ◽  
G. F. Neumark ◽  
S. T. Pantelides

1995 ◽  
Vol 378 ◽  
Author(s):  
Chris G Van de Walle ◽  
Jörg Neugebauer

AbstractWe discuss the application of state-of-the-art first-principles calculations to the problem of defects, impurities, and doping levels in semiconductors. Since doping problems are of particular relevance in wide-band-gap materials, we focus here on studies of ZnSe and GaN. For ZnSe, we discuss our latest insights in the influence of compensation and dopant solubility on the experimentally observed limitation of the free carrier concentration in p-type ZnSe. For GaN, we focus on the role of native defects in doping or compensation of the material, with particular emphasis on the n-type conductivity of as-grown GaN.


2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle

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