Role of native defects in wide-band-gap semiconductors

1991 ◽  
Vol 66 (5) ◽  
pp. 648-651 ◽  
Author(s):  
D. B. Laks ◽  
C. G. Van de Walle ◽  
G. F. Neumark ◽  
S. T. Pantelides
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Native Defects ◽  
Wide Band Gap Semiconductors

Theory of Defects in Wide-Band-Gap Semiconductors

1995 ◽  
Vol 378 ◽  
Author(s):  
Chris G Van de Walle ◽  
Jörg Neugebauer
Keyword(s):  
Band Gap ◽  
First Principles ◽  
State Of The Art ◽  
Wide Band ◽  
First Principles Calculations ◽  
Wide Band Gap ◽  
Native Defects ◽  
In Doping ◽  
Wide Band Gap Semiconductors

AbstractWe discuss the application of state-of-the-art first-principles calculations to the problem of defects, impurities, and doping levels in semiconductors. Since doping problems are of particular relevance in wide-band-gap materials, we focus here on studies of ZnSe and GaN. For ZnSe, we discuss our latest insights in the influence of compensation and dopant solubility on the experimentally observed limitation of the free carrier concentration in p-type ZnSe. For GaN, we focus on the role of native defects in doping or compensation of the material, with particular emphasis on the n-type conductivity of as-grown GaN.

scholarly journals Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

2016 ◽  
Vol 93 (20) ◽  
Author(s):  
Audrius Alkauskas ◽  
Cyrus E. Dreyer ◽  
John L. Lyons ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Excited States ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type
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