Instabilities of Short-Pulse Laser Propagation through Plasma Channels

1994 ◽  
Vol 73 (26) ◽  
pp. 3540-3543 ◽  
Author(s):  
G. Shvets ◽  
J. S. Wurtele
2003 ◽  
Author(s):  
Champak Das ◽  
Ashish Trivedi ◽  
Kunal Mitra ◽  
Tuan Vo-Dinh

1996 ◽  
Vol 53 (1) ◽  
pp. 1068-1083 ◽  
Author(s):  
M. D. Feit ◽  
J. C. Garrison ◽  
A. M. Rubenchik

2003 ◽  
Vol 36 (14) ◽  
pp. 1714-1721 ◽  
Author(s):  
Champak Das ◽  
Ashish Trivedi ◽  
Kunal Mitra ◽  
Tuan Vo-Dinh

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


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