scholarly journals Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

2017 ◽  
Vol 1 (4) ◽  
Author(s):  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Band Structure ◽  
Schottky Barriers ◽  
Band Offsets ◽  
Substitutional Doping

scholarly journals Band Structure, Band Offsets, and Intrinsic Defect Properties of Few-Layer Arsenic and Antimony

2020 ◽  
Vol 124 (13) ◽  
pp. 7441-7448 ◽  
Author(s):  
Yuanshuang Liu ◽  
Ting Wang ◽  
John Robertson ◽  
Jianbin Luo ◽  
Yuzheng Guo ◽  
...  
Keyword(s):  
Band Structure ◽  
Intrinsic Defect ◽  
Band Offsets

Band Structure Engineering by Substitutional Doping in Solid-State Solutions of [5-Me-PLY(O,O)]2B(1–x)Bex Radical Crystals

2015 ◽  
Vol 137 (31) ◽  
pp. 10000-10008 ◽  
Author(s):  
Pradip Bag ◽  
Mikhail E. Itkis ◽  
Dejan Stekovic ◽  
Sushanta K. Pal ◽  
Fook S. Tham ◽  
...  
Keyword(s):  
Solid State ◽  
Band Structure ◽  
Substitutional Doping ◽  
Structure Engineering

Observation of band structure on amorphous silicon surface and performance of solar cells with controlled band offsets on hetero-junctions

2012 ◽  
Vol 358 (17) ◽  
pp. 2232-2235 ◽  
Author(s):  
Shintaro Miyanishi ◽  
Hideki Koh ◽  
Yoshiro Takaba ◽  
Ryoji Miyamoto ◽  
Atsushi Gorai ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Structure ◽  
Amorphous Silicon ◽  
Silicon Surface ◽  
Band Offsets ◽  
And Performance

Electron states at semiconductor interfaces: the intrinsic and extrinsic charge neutrality levels

1993 ◽  
Vol 344 (1673) ◽  
pp. 567-577 ◽  
Keyword(s):  
Chemical Properties ◽  
Schottky Barriers ◽  
Semiconductor Interface ◽  
Charge Neutrality ◽  
Band Offsets ◽  
Semiconductor Interfaces ◽  
Metal Atoms ◽  
Barrier Formation ◽  
Interface Barrier ◽  
Interface Geometry

A discussion is presented on the semiconductor interface barrier formation. Schottky barriers and heterojunction band offsets are analysed by means of the intrinsic and extrinsic charge neutrality levels. These levels are shown to be controlled by the interface geometry and its local chemistry. The chemical properties and the charge neutrality levels of different Schottky barriers are presented. Heterojunction band offsets are also analysed and are shown to depend on the electronegativity of the metal intralayers deposited at the interface: more electronegative metal atoms tend to reduce the hetero junction band offsets.

Band structure and band offsets in quantum wells

1996 ◽  
Vol 159 (1-4) ◽  
pp. 542-545 ◽  
Author(s):  
M. Livingstone ◽  
I. Galbraith
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Band Offsets
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