scholarly journals Elastic constants of fibre-textured thin films determined by X-ray diffraction

2009 ◽  
Vol 42 (3) ◽  
pp. 416-428 ◽  
Author(s):  
K. J. Martinschitz ◽  
R. Daniel ◽  
C. Mitterer ◽  
J. Keckes

A new methodology is presented that allows the rapid determination of elastic constants of cubic fibre-textured thin films by X-ray diffraction. The theoretical concept is developed and tested on calculated examples of Cu and CrN films. The mechanical elastic constants are extrapolated from X-ray elastic constants by taking into consideration crystal and macroscopic elastic anisotropy. The derived algorithm enables the determination of a reflection and the corresponding value of the X-ray anisotropic factor Γ for which the X-ray elastic constants are equal to their mechanical counterparts in the case of fibre-textured cubic polycrystalline aggregates. The approach is independent of the crystal elastic anisotropy and depends on the fibre-texture type, the texture sharpness, the number of randomly oriented crystallites and the supposed grain-interaction model. In the experimental part, out-of-plane Young's moduli of 111 and 311 fibre-textured Cu and CrN thin films deposited on monocrystalline Si(100) substrates are determined. The moduli are extrapolated from thin-film experimental X-ray elastic constants that are determined by a combination of X-ray diffraction substrate curvature and sin2ψ methods. For the calculation, the film macroscopic elastic anisotropy (texture) is considered. The advantage of the new technique lies in the fact that experimental moduli are determined nondestructively, using a static diffraction experiment, and represent volume-averaged quantities.

2008 ◽  
Vol 1139 ◽  
Author(s):  
Klaus Martinschitz ◽  
Rostislav Daniel ◽  
Christian Mitterer ◽  
Keckes Jozef

AbstractA new X-ray diffraction technique to determine elastic moduli of polycrystalline thin films deposited on monocrystalline substrates is demonstrated. The technique is based on the combination of sin2ψ and X-ray diffraction wafer curvature techniques which are used to characterize X-ray elastic strains and macroscopic stress in thin film. The strain measurements must be performed for various hkl reflections. The stresses are determined from the substrate curvature applying the Stoney's equation. The stress and strain values are used to calculate hkl reflection dependent X-ray elastic moduli. The mechanical elastic moduli can be then extrapolated from X-ray elastic moduli considering film macroscopic elastic anisotropy. The derived approach shows for which reflection and corresponding value of the X-ray anisotropic factor Γ the X-ray elastic moduli are equal to their mechanical counterparts in the case of fibre textured cubic polycrystalline aggregates. The approach is independent of the crystal elastic anisotropy and depends on the fibre texture type, the texture sharpness, the amount of randomly oriented crystallites and on the supposed grain interaction model. The new method is demonstrated on a fiber textured Cu thin film deposited on monocrystalline Si(100) substrate. The advantage of the new technique remains in the fact that moduli are determined non-destructively, using a static diffraction experiment and represent volume averaged quantities.


2009 ◽  
Vol 106 (3) ◽  
pp. 713-718 ◽  
Author(s):  
Marc-Michael Blum ◽  
Marat Mustyakimov ◽  
Heinz Rüterjans ◽  
Kai Kehe ◽  
Benno P. Schoenborn ◽  
...  

1995 ◽  
Vol 39 ◽  
pp. 637-643
Author(s):  
J. Chaudhuri ◽  
F. Hashmi

In this study, the equations based on x-ray diffraction theory were developed to determine the thickness of multiple layer thin films. The kinematical expression of the integrated reflected intensity from the substrate and films was corrected for the primary and secondary extinction effects assuming a mosaic crystal model. As an example of the application of the method, thicknesses of a double heterostructure system, namely AlAs/AIGaAs/GaAs, were determined. Good agreement was obtained between the results from the x-ray measurement and scanning electron microscopy data demonstrating high precision of this technique.


1983 ◽  
Vol 27 ◽  
pp. 197-206
Author(s):  
C. P. Gazzara

One of the most detrimental effects on the accuracy of an X-ray diffraction residual stress analysis, XRDRSA(l), is found in the examination of textured materials. The degree of elastic anisotropy and texture is in general agreement with the extent of the error in the residual stress. Several approaches have been made to correct for the effects of texture, particularly involving experimental techniques. Reviews of such efforts are given by H. D811e(2), v.M. Hauk﹛3) and G. Maeder, J.L. Lebrun and J.M. Sprauel (4), just to mention a few.A brief chronology of the texture corrections involved in XRDRSA follows. With isotropic materials the d spacing of a crystal lattice, d, is assumed to vary linearly with sin2ψ. With textured materials the d vs sin2ψ relationship is nonlinear. This is due to the anisotropy of the elastic constants and their departure from a random distribution, or taking on a preferred orientation.


2013 ◽  
Vol 46 (6) ◽  
pp. 1749-1754 ◽  
Author(s):  
P. Wadley ◽  
A. Crespi ◽  
J. Gázquez ◽  
M.A. Roldán ◽  
P. García ◽  
...  

Determining atomic positions in thin films by X-ray diffraction is, at present, a task reserved for synchrotron facilities. Here an experimental method is presented which enables the determination of the structure factor amplitudes of thin films using laboratory-based equipment (Cu Kα radiation). This method was tested using an epitaxial 130 nm film of CuMnAs grown on top of a GaAs substrate, which unlike the orthorhombic bulk phase forms a crystal structure with tetragonal symmetry. From the set of structure factor moduli obtained by applying this method, the solution and refinement of the crystal structure of the film has been possible. The results are supported by consistent high-resolution scanning transmission electron microscopy and stoichiometry analyses.


2003 ◽  
Vol 83 (3) ◽  
pp. 473-475 ◽  
Author(s):  
P.-O. Renault ◽  
E. Le Bourhis ◽  
P. Villain ◽  
Ph. Goudeau ◽  
K. F. Badawi ◽  
...  

2016 ◽  
Vol 49 (4) ◽  
pp. 1308-1314 ◽  
Author(s):  
Christophe Lefevre ◽  
Alexandre Thomasson ◽  
Francois Roulland ◽  
Vincent Favre-Nicolin ◽  
Yves Joly ◽  
...  

The cationic distribution is decisive for both the magnetic and electric properties of complex oxides. While it can be easily determined in bulk materials using classical methods such as X-ray or neutron diffraction, difficulties arise for thin films owing to the relatively small amount of material to probe. It is shown here that a full determination of the cationic site distribution in thin films is possible through an optimized processing of resonant elastic X-ray scattering experiments. The method is illustrated using gallium ferrite Ga2−xFexO3samples which have been the focus of an increasing number of studies this past decade. They indeed represent an alternative to the, to date, only room-temperature magnetoelectric compound BiFeO3. The methodology can be applied to determine the element distribution over the various crystallographic sites in any crystallized system.


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