Determination of Thickness of Multiple Layer Thin Films by X-ray Diffraction Technique

1995 ◽  
Vol 39 ◽  
pp. 637-643
Author(s):  
J. Chaudhuri ◽  
F. Hashmi
Keyword(s):  
Thin Films ◽  
Diffraction Theory ◽  
Scanning Electron Microscopy Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Multiple Layer ◽  
Crystal Model ◽  
Microscopy Data ◽  
Secondary Extinction

In this study, the equations based on x-ray diffraction theory were developed to determine the thickness of multiple layer thin films. The kinematical expression of the integrated reflected intensity from the substrate and films was corrected for the primary and secondary extinction effects assuming a mosaic crystal model. As an example of the application of the method, thicknesses of a double heterostructure system, namely AlAs/AIGaAs/GaAs, were determined. Good agreement was obtained between the results from the x-ray measurement and scanning electron microscopy data demonstrating high precision of this technique.

Obtaining the structure factors for an epitaxial film using Cu X-ray radiation

2013 ◽  
Vol 46 (6) ◽  
pp. 1749-1754 ◽  
Author(s):  
P. Wadley ◽  
A. Crespi ◽  
J. Gázquez ◽  
M.A. Roldán ◽  
P. García ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Structure Factor ◽  
Tetragonal Symmetry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Structure Factors ◽  
Scanning Transmission

Determining atomic positions in thin films by X-ray diffraction is, at present, a task reserved for synchrotron facilities. Here an experimental method is presented which enables the determination of the structure factor amplitudes of thin films using laboratory-based equipment (Cu Kα radiation). This method was tested using an epitaxial 130 nm film of CuMnAs grown on top of a GaAs substrate, which unlike the orthorhombic bulk phase forms a crystal structure with tetragonal symmetry. From the set of structure factor moduli obtained by applying this method, the solution and refinement of the crystal structure of the film has been possible. The results are supported by consistent high-resolution scanning transmission electron microscopy and stoichiometry analyses.

Determination of the cationic distribution in oxidic thin films by resonant X-ray diffraction: the magnetoelectric compound Ga2−xFexO3

2016 ◽  
Vol 49 (4) ◽  
pp. 1308-1314 ◽  
Author(s):  
Christophe Lefevre ◽  
Alexandre Thomasson ◽  
Francois Roulland ◽  
Vincent Favre-Nicolin ◽  
Yves Joly ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Element Distribution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Site Distribution ◽  
X Ray Scattering ◽  
Cationic Distribution ◽  
Cationic Site

The cationic distribution is decisive for both the magnetic and electric properties of complex oxides. While it can be easily determined in bulk materials using classical methods such as X-ray or neutron diffraction, difficulties arise for thin films owing to the relatively small amount of material to probe. It is shown here that a full determination of the cationic site distribution in thin films is possible through an optimized processing of resonant elastic X-ray scattering experiments. The method is illustrated using gallium ferrite Ga2−xFexO3samples which have been the focus of an increasing number of studies this past decade. They indeed represent an alternative to the, to date, only room-temperature magnetoelectric compound BiFeO3. The methodology can be applied to determine the element distribution over the various crystallographic sites in any crystallized system.

In-situ X-ray diffraction investigations of thin films: Determination of thermoelastic constants

2008 ◽  
Vol 2008 (27) ◽  
pp. 253-260
Author(s):  
Y. Kuru ◽  
M. Wohlschlögel ◽  
U. Welzel ◽  
E. J. Mittemeijer
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray
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