Positron lifetime spectroscopy of defect structures in Cd1–x Zn x Te mixed crystals grown by vertical Bridgman–Stockbarger method

Author(s):  
Marek Gorgol ◽  
Radosław Zaleski ◽  
Agnieszka Kierys ◽  
Daniel Kamiński ◽  
Karol Strzałkowski ◽  
...  

Positron annihilation lifetime spectroscopy was used to examine grown-in defects in Cd1–x Zn x Te mixed crystals as a function of Zn content (x = 0, 0.07, 0.11, 0.49, 0.9, 0.95, 1) and measuring temperature. All samples were prepared using the high-pressure modified vertical Bridgman–Stockbarger method. The crystal structure and material phase were characterized by X-ray diffraction. The positron lifetime spectra reveal the presence of both open volumes and shallow traps regardless of the sample composition. In particular, both average and bulk lifetimes are found to be much higher in ternary alloys (CdZnTe) than those in binary systems (CdTe and ZnTe). This originates from distinct differences in average electron densities and the nature of open-volume defects between binary and ternary samples. Competition in positron trapping with increasing Zn content is observed between defects characteristic for both structural systems. Moreover, a clear correlation is shown between defects and the lattice thermal conductivity of studied samples. The applicability of the positron trapping model to CdTe-based materials is discussed.

2020 ◽  
Vol 534 ◽  
pp. 125491 ◽  
Author(s):  
H.P. Hsu ◽  
D.Y. Lin ◽  
C.W. Chen ◽  
Y.F. Wu ◽  
K. Strzałkowski ◽  
...  

2015 ◽  
Vol 213 (1) ◽  
pp. 165-169 ◽  
Author(s):  
Christian Herold ◽  
Hubert Ceeh ◽  
Thomas Gigl ◽  
Markus Reiner ◽  
Marco Haumann ◽  
...  

1995 ◽  
Vol 60 (6) ◽  
pp. 541-544 ◽  
Author(s):  
A. Polity ◽  
Th. Abgarjan ◽  
R. Krause-Rehberg

2008 ◽  
Vol 607 ◽  
pp. 134-136
Author(s):  
Y.J. Zhang ◽  
Ai Hong Deng ◽  
You Wen Zhao ◽  
J. Yu ◽  
X.X. Yu ◽  
...  

Positron annihilation lifetime (PAL) spectroscopy,photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.


1988 ◽  
Vol 38 (14) ◽  
pp. 9545-9554 ◽  
Author(s):  
H.-E. Schaefer ◽  
R. Würschum ◽  
R. Birringer ◽  
H. Gleiter

2013 ◽  
Vol 51 (15) ◽  
pp. 1157-1161 ◽  
Author(s):  
Jason Engbrecht ◽  
David Green ◽  
Marc A. Hillmyer ◽  
David Olson ◽  
Eric M. Todd

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