Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 134-136
Author(s):  
Y.J. Zhang ◽  
Ai Hong Deng ◽  
You Wen Zhao ◽  
J. Yu ◽  
X.X. Yu ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Positron Lifetime ◽  
Deep Level ◽  
High Concentration ◽  
Positron Annihilation Lifetime ◽  
Donor Type ◽  
Positron Lifetime Spectroscopy ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1167-1170 ◽  
Author(s):  
Vito Raineri ◽  
Fabrizio Roccaforte ◽  
Sebania Libertino ◽  
Alfonso Ruggiero ◽  
V. Massimino ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ion Irradiation ◽  
Deep Level ◽  
Schottky Diodes ◽  
Arrhenius Dependence ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

Proton Irradiation Induced Defects in 611- and 4H-SiC

1998 ◽  
Vol 540 ◽  
Author(s):  
Werner Puff ◽  
Adam G. Balogh ◽  
Peter Mascher
Keyword(s):  
Proton Irradiation ◽  
Positron Lifetime ◽  
Doppler Broadening ◽  
Defect Complexes ◽  
Radiation Induced ◽  
Positron Lifetime Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Type Sample

AbstractAnnealing of defects in proton irradiated bulk n-type 6H- and semi-insulating 4H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. For the n-type sample radiation induced defects in dependence of the proton fluence were studied. Three or four annealing stages were found, during which the formation of larger defect complexes could be observed.

scholarly journals M-Center in Neutron Irradiated 4H-SiC

2021 ◽  
Author(s):  
Ivana Capan ◽  
Tomislav Brodar ◽  
Takahiro Makino ◽  
Vladimir Radulovic ◽  
Luka Snoj
Keyword(s):  
Fast Neutron ◽  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Fast Neutron Irradiation ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Metastable Defect

We report on metastable defects introduced in n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation induced defects. In addition to silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep level defects, all arising from the metastable defect, the M-center. The metastable deep level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep level M4, recently observed in ion implanted 4H-SiC, has been additionally confirmed in neutron irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 192-197 ◽  
Author(s):  
Helge Malmbekk ◽  
Lasse Vines ◽  
Edouard V. Monakhov ◽  
Bengt Gunnar Svensson
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Conduction Band Edge ◽  
Absolute Concentrations ◽  
Transient Spectroscopy ◽  
P Type ◽  
Induced Defects ◽  
Irradiation Induced Defects

Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using deep level transient spectroscopy (DLTS), as well as minority carrier transient spectroscopy (MCTS). Two H related levels at Ev+0.27 eV and Ec-0.32 eV have been observed (Ev and Ec denote the valence and conduction band edge, respectively). Both levels form after a 10 min anneal at 125C, concurrent with the release of H from the boron-hydrogen (B-H) complex. The correlated formation rates and absolute concentrations of the two levels support the notion that they are due to the same defect. In addition, a level at Ec-0.45 eV is observed and discussed in terms of vacancy-hydrogen related defects.

Electronic Levels Induced by Irradiation in 4H-Silicon Carbide

2005 ◽  
Vol 483-485 ◽  
pp. 359-364 ◽  
Author(s):  
Antonio Castaldini ◽  
Anna Cavallini ◽  
L. Rigutti ◽  
Filippo Nava
Keyword(s):  
Silicon Carbide ◽  
Deep Level ◽  
Particle Energy ◽  
Free Carrier ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2 MeV. The electronic levels associated with the irradiation-induced defects were analyzed by current-voltage characteristics and deep level transient spectroscopy measurements up to 700 K. In the same temperature range the apparent free carrier concentration was measured by capacitance-voltage characteristics to monitor possible compensation effects due to the deep level associated to the induced defects. Introduction rate, enthalpy and capture cross-section of such deep levels were compared and some conclusions about the nature of the defects were drawn.

On the Effect of Lead on Irradiation Induced Defects in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 373-378 ◽  
Author(s):  
Marie-Laure David ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
V.B. Neimash ◽  
M. Kras'ko ◽  
...  
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Group Iv ◽  
Conduction Band Edge ◽  
Czochralski Silicon ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Pb Doping

Different group IV impurities (Pb, C, and Sn) have been introduced in the melt during the growth of n-type Czochralski silicon. The samples have been irradiated with 1 MeV electrons to a fluence of 4x1015cm-2. The irradiation-induced defects have been studied by Deep Level Transient Spectroscopy (DLTS). It is shown that the formation of one of the irradiation-induced deep level is avoided by the Pb-doping. This level is located at 0.37 eV from the conduction band edge (EC) and shows an apparent capture cross-section of 7x10-15cm2. In addition, another irradiation induced deep level located at EC - 0.32 eV has been studied in more details.

Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC---Comparison Studies

2004 ◽  
Vol 815 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel ◽  
G. C. Farlow ◽  
M. A. Capano
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Schottky Diodes ◽  
Annealing Behavior ◽  
Argon Ions ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Post Implantation

AbstractArgon ions (Ar+) were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV and at a dose of 2 × 1016 cm−2. After post-implantation annealing at 1600 °C, Schottky diodes were fabricated on the ion implanted samples. Bulk n-type 4H-SiC samples were irradiated at room temperature with 1 MeV electrons at doses of 1 × 1016 to 5.1 × 1017 el/cm2. The current density of the beam was 0.91 μA/cm2. Deep Level Transient Spectroscopy (DLTS) was used to characterize the induced defects. DLTS studies of Ar+ implanted samples showed six defect levels at EC – 0.18 eV, EC – 0.23eV, EC – 0.31eV, EC – 0.38 eV, EC – 0.72 eV, and EC – 0.81 eV. Z1/Z2 defect is the dominant defect in the electron irradiated sample and anneals out completely after 10 minutes at 1000 °C. However, Z1/Z2 defect in Ar+ implanted samples was stable up to 1600 °C. It is suggested that the annealing behavior of Z1/Z2 depends on the source of its formation.

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