Fabrication and characterization of n-ZnO/p-GaSb heterojunction diode

Purpose The purpose of this paper is to examine the growth and characterization of the two different compound semiconductors, namely, n-zinc oxide (ZnO) and p-gallium antimonide (GaSb). In this paper, fabrication and characterization of n-ZnO/p-GaSb heterojunction diode is analyzed. Design/methodology/approach Thermo vertical direction solidification (TVDS) method was used to synthesize undoped GaSb ingot from high purity Ga (5N) and Sb (4N) host materials. Thermal evaporation technique is used to prepare a film of GaSb on glass substrate from the pre-synthesized bulk material by TVDS method. Undoped ZnO film was grown on GaSb film by sol–gel method by using chemical wet and dry (CWD) technique to fabricate n-ZnO/p-GaSb heterojunction diode. Findings The formation of crystalline structure and surface morphological analysis of both the GaSb bulk and film have been carried out by x-ray diffraction (XRD) analysis and scanning electron microscopy analysis. From the XRD studies, the structural characterization and phase identification of ZnO/GaSb interface. The current–voltage characteristic of the n-ZnO/p-GaSb heterostructure is found to be rectifying in nature. Originality/value GaSb film growth on any substrate by thermal evaporation method taking a small piece of the sample from the pre-synthesized GaSb bulk ingot has not been reported yet. Semiconductor device with heterojunction diode by using two different semiconductors such as ZnO/GaSb was used by this group for the first time.

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Fabrication and characterization of Pb1−xYbxTe based alloy thin film thermoelectric generators using thermal evaporation method

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/smelec.2012.6417245 ◽

2012 ◽

Author(s):

Arshad Hmood Abd Al Kadhim ◽

Arej Kadhim Abbas ◽

Haslan Abu Hassan

Keyword(s):

Thin Film ◽

Thermal Evaporation ◽

Alloy Thin Film ◽

Thermoelectric Generators ◽

Thermal Evaporation Method ◽

Evaporation Method ◽

Fabrication And Characterization

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Fabrication and characterization of superconducting MgB2 thin films grown by rf sputtering and thermal evaporation method

Physica C Superconductivity ◽

10.1016/j.physc.2009.05.220 ◽

2009 ◽

Vol 469 (15-20) ◽

pp. 1574-1577 ◽

Cited By ~ 5

Author(s):

S.C. Park ◽

K.J. Song ◽

S.G. Kang ◽

Y.J. Lim ◽

J.-K. Chung ◽

...

Keyword(s):

Thin Films ◽

Thermal Evaporation ◽

Rf Sputtering ◽

Thermal Evaporation Method ◽

Evaporation Method ◽

Fabrication And Characterization ◽

Mgb2 Thin Films

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Fabrication and characterization of novel bicrystalline ZnO nanowires

Journal of Materials Research ◽

10.1557/jmr.2009.0313 ◽

2009 ◽

Vol 24 (8) ◽

pp. 2536-2540

Author(s):

Huizhao Zhuang ◽

Dexiao Wang ◽

Jiabing Shen ◽

Chengshan Xue ◽

Xiaokai Zhang ◽

...

Keyword(s):

Thermal Evaporation ◽

Zno Nanowires ◽

Zone Axis ◽

Initial Growth ◽

Thermal Evaporation Method ◽

Twinning Plane ◽

Fabrication And Characterization ◽

Twin Defects ◽

Zn Alloy

Two types of novel bicrystalline ZnO nanowires have been synthesized by a thermal evaporation method. The morphology and microstructure of the nanowires have been extensively investigated. One type of the nanowires has agg twin boundary extending down its entire length with twinning plane and the zone axis. The other type is those nanowires with twin crystal-single crystal junction. The twin defects in the Sn-Zn alloy droplets in the initial growth process are proposed for interpreting the growth of these two kinds of bicrystalline nanowires.

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Fabrication and characterization of sputtered Cu2O:N/c-Si heterojunction diode

Applied Physics Letters ◽

10.1063/1.4986084 ◽

2017 ◽

Vol 111 (9) ◽

pp. 093501 ◽

Cited By ~ 9

Author(s):

Yuki Takiguchi ◽

Yutaro Takei ◽

Kazuyoshi Nakada ◽

Shinsuke Miyajima

Keyword(s):

Heterojunction Diode ◽

Fabrication And Characterization

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Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors

Journal of Electronic Materials ◽

10.1007/s11664-008-0430-7 ◽

2008 ◽

Vol 37 (9) ◽

pp. 1391-1395 ◽

Cited By ~ 13

Author(s):

M. Yokota ◽

K. Yasuda ◽

M. Niraula ◽

K. Nakamura ◽

H. Ohashi ◽

...

Keyword(s):

Gamma Ray ◽

Heterojunction Diode ◽

Gamma Ray Detectors ◽

Fabrication And Characterization

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Fabrication and characterization of piezoelectric nanogenerator based on Al/ZnO/Au structure

Microelectronics International ◽

10.1108/mi-11-2015-0092 ◽

2017 ◽

Vol 34 (1) ◽

pp. 35-39 ◽

Cited By ~ 2

Author(s):

Mubeen Zafar ◽

Muhammad Naeem Awais ◽

Muhammad Asif ◽

Amir Razaq ◽

Gul Amin

Keyword(s):

Mechanical Energy ◽

Short Circuit ◽

Research Work ◽

Cost Effective ◽

Open Circuit ◽

Thin Layers ◽

Full Potential ◽

Content Type ◽

Fabrication And Characterization

Purpose The purpose of this research work is to harvest energy using the piezoelectric properties of ZnO nanowires (NW). Fabrication and characterization of the piezoelectric nanogenerator (NG), based on Al/ZnO/Au structure without using hosting layer, were done to harvest energy. The proposed method has full potential to harvest the cost-effective energy. Design/methodology/approach ZnO NW were fabricated between the thin layers of Al- and Au-coated substrates for the development of piezoelectric NG. To grow ZnO NW, ZnO seed layer was prepared on the Al-coated substrate, and then ZnO NW were grown by aqueous chemical growth method. Finally, Au top electrode was used to conclude the Al/ZnO/Au NG structure. The Al and Au electrodes were used to establish the ohmic and Schottky contacts with ZnO NW, respectively. Findings Surface morphology of the fabricated device was done by using scanning electron microscopy, and electrical characterization of the sample was performed with digital oscilloscope, picoammeter and voltmeter. The energy harvesting experiment was performed to excite the presented device. The fabricated piezoelectric-sensitive device revealed the maximum open circuit voltage up to 5 V and maximum short circuit current up to 30 nA, with a maximum power of 150 nW. Consequently, it was also shown that the output of the fabricated device was increased by applying the stress. The presented work will help for the openings to capture the mechanical energy from the surroundings to power up the nano/micro-devices. This research work shows that NGs have the competency to build the self-powered nanosystems. It has potential applications in biosensing and personal electronics. Originality/value The fabrication of simple and cost-effective piezoelectric NG is done with a structure of Al/ZnO/Au without using hosting layer. The presented method elucidates an efficient and cost-effective approach to harvest the mechanical energy from the native environment.

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