Effect of radiation-induced charge on 1/f noise in MOS devices

1990 ◽  
Vol 37 (6) ◽  
pp. 1696-1702 ◽  
Author(s):  
T.L. Meisenheimer ◽  
D.M. Fleetwood
Keyword(s):  
Mos Devices ◽  
Radiation Induced ◽  
Induced Charge

Electron trapping by radiation‐induced charge in MOS devices

1976 ◽  
Vol 47 (3) ◽  
pp. 1196-1198 ◽  
Author(s):  
J. M. Aitken ◽  
D. R. Young
Keyword(s):  
Electron Trapping ◽  
Mos Devices ◽  
Radiation Induced ◽  
Induced Charge

Bias and frequency dependence of radiation-induced-charge trapping in MOS devices

2001 ◽  
Vol 48 (6) ◽  
pp. 2114-2120 ◽  
Author(s):  
J.A. Felix ◽  
D.M. Fleetwood ◽  
L.C. Riewe ◽  
M.R. Shaneyfelt ◽  
P.S. Winokur
Keyword(s):  
Frequency Dependence ◽  
Charge Trapping ◽  
Mos Devices ◽  
Radiation Induced ◽  
Induced Charge

Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices

1996 ◽  
Vol 43 (6) ◽  
pp. 2572-2578 ◽  
Author(s):  
V.V. Emelianov ◽  
A.V. Sogoyan ◽  
O.V. Meshurov ◽  
V.N. Ulimov ◽  
V.S. Pershenkov
Keyword(s):  
Thermal Dependence ◽  
Mos Devices ◽  
Radiation Induced ◽  
Induced Charge

Radiation-induced charge transfer inefficiency in charge-coupled devices: Sentinel-4 CCD pre-development as a case study

2014 ◽  
Author(s):  
T. Prod'homme ◽  
J.-M. Belloir ◽  
H. Weber ◽  
G. Bazalgette Courrèges-Lacoste ◽  
R. Meynart ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Charge Coupled Devices ◽  
Radiation Induced ◽  
Induced Charge
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