A self-consistent fluid simulation of an inductively coupled plasma reactor

1999 ◽  
Vol 27 (1) ◽  
pp. 54-55 ◽  
Author(s):  
D. Bose ◽  
T.R. Govindan ◽  
M. Meyyappan
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
Fluid Simulation ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor ◽  
Self Consistent

Self-sustained secondary discharge in inductively coupled plasma reactor

2000 ◽  
Vol 76 (18) ◽  
pp. 2508-2510
Author(s):  
Joachim Walewski ◽  
Jussi Larjo ◽  
Rolf Hernberg
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor

Growth of multiwall carbon nanotubes in an inductively coupled plasma reactor

2002 ◽  
Vol 91 (9) ◽  
pp. 6027-6033 ◽  
Author(s):  
Lance Delzeit ◽  
Ian McAninch ◽  
Brett A. Cruden ◽  
David Hash ◽  
Bin Chen ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
Multiwall Carbon Nanotubes ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor ◽  
Multiwall Carbon

Flow and temperature patterns in an inductively coupled plasma reactor: Experimental measurements and CFD simulations

AIChE Journal ◽  
2014 ◽  
Vol 60 (10) ◽  
pp. 3647-3664 ◽  
Author(s):  
Sangeeta B. Punjabi ◽  
Sunil N. Sahasrabudhe ◽  
S. Ghorui ◽  
A. K. Das ◽  
Narendra K. Joshi ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
Experimental Measurements ◽  
Cfd Simulations ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor

Designing Ultra Low-k Dielectric Materials for Ease of Patterning

2010 ◽  
Vol 1249 ◽  
Author(s):  
George Andrew Antonelli ◽  
Gengwei Jiang ◽  
Mandyam Sriram ◽  
Kaushik Chattopadhyay ◽  
Wei Guo ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Beam ◽  
Plasma Reactor ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Interlayer Dielectric ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor ◽  
Low K

AbstractOrganosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.

scholarly journals Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

2018 ◽  
Vol 47 (9) ◽  
pp. 4964-4969 ◽  
Author(s):  
Jean-Pierre Landesman ◽  
Daniel T. Cassidy ◽  
Marc Fouchier ◽  
Erwine Pargon ◽  
Christophe Levallois ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
Plasma Chemistry ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor

Effect of chamber wall conditions on Cl and Cl2 concentrations in an inductively coupled plasma reactor

2002 ◽  
Vol 20 (1) ◽  
pp. 43-52 ◽  
Author(s):  
Saurabh J. Ullal ◽  
Anna R. Godfrey ◽  
Erik Edelberg ◽  
Linda Braly ◽  
Vahid Vahedi ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
Chamber Wall ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor
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