Optimization of deep silicon etching process for microstructures fabrication

The paper presents the study of cyclic process of deep anisotropic silicon etching, called Oxi-Etch, in which the steps of etching and oxidation alternate, allowing deep etching of silicon with an anisotropic profile. This process forms typical for cyclic etching process sidewall profile called scalloping. Opportunities for modification and optimization of the process for specific application were investigated. The effects of optimization of the bias voltage and the duration of the etching step on the parameters of the resulting structures, such as the etching depth, wall roughness, and the accuracy of transferring the lithographic size, are considered. Balance between etch rate and scalloping was established.

Single-step alkaline etching of deep silicon cavities for chip-scale atomic clock technology

This paper presents the results of experiments on the development of the technology of MEMS alkali vapor cells for a miniature quantum frequency standard. The classical design of a two-chamber silicon cell containing an optical chamber, shallow filtration channels and a technical container for a solid-state alkali source was implemented in a single-step process of wet anisotropic silicon etching. To prevent the destruction of the filtration channels during etching of the through silicon cavities, the shapes of the compensating structures at the convex corners of the silicon nitride mask were calculated and the composition of the silicon etchant was experimentally found. The experiments results were used in the manufacture of chip-scale atomic clock cells containing vapors of 87Rb or 133Cs isotopes in the neon atmosphere.

Comparison between Bosch and STiGer Processes for Deep Silicon Etching

The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented. Like the Bosch process, it consists in repeating cycles composed of an isotropic etching step followed by a passivation step. If the etching step is similar for both processes, the passivation step is a SiF4/O2 plasma that efficiently deposits a SiOxFy layer on the sidewalls only if the substrate is cooled at cryogenic temperature. In this paper, it is shown that the STiGer process can achieve profiles and performances equivalent to the Bosch process. However, since sidewall passivation is achieved with polymer free plasma chemistry, less frequent chamber cleaning is necessary, which contributes to increase the throughput.

Bidirectional Electromagnetically Induced Transparency Based on Coupling of Magnetic Dipole Modes in Amorphous Silicon Metasurface

A bidirectional electromagnetically induced transparency (EIT) arising from coupling of magnetic dipole modes is demonstrated numerically and experimentally based on nanoscale a-Si cuboid-bar metasurface. Analyzed by the finite-difference time-domain (FDTD) Solutions, both the bright and dark magnetic dipole mode is excited in the cuboid, while only the dark magnetic dipole mode is excited in the bar. By breaking the symmetry of the cuboid-bar structure, the destructive interference between bright and dark magnetic dipole modes is induced, resulting in the bidirectional EIT phenomenon. The position and amplitude of simulated EIT peak is adjusted by the vertical spacing and horizontal spacing. The EIT metasurface was fabricated by Electron-Beam Lithography and deep silicon etching technique on the a-Si film deposited by Plasma-Enhanced Chemical Vapor Deposition. Measured by a convergent spectrometer, the fabricated sample achieved a bidirectional EIT peak with transmission up to 65% and 63% under forward and backward incidence, respectively. Due to the enhanced magnetic field induced by the magnetic dipole resonance, the fabricated bidirectional EIT metasurface provides a potential way for magnetic sensing and magnetic nonlinearity.