The chemistry of the organometallic vapor-phase epitaxy of mercury cadmium telluride

1992 ◽  
Vol 80 (10) ◽  
pp. 1625-1640 ◽  
Author(s):  
R.F. Hicks
Keyword(s):  
Cadmium Telluride ◽  
Vapor Phase ◽  
Mercury Cadmium Telluride ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Study of mercury cadmium telluride epilayers grown by metalorganic vapor‐phase epitaxy

1985 ◽  
Vol 57 (6) ◽  
pp. 2014-2017 ◽  
Author(s):  
P. M. Raccah ◽  
J. W. Garland ◽  
Z. Zhang ◽  
U. Lee ◽  
S. Ugur ◽  
...  
Keyword(s):  
Cadmium Telluride ◽  
Vapor Phase ◽  
Mercury Cadmium Telluride ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

scholarly journals Control of Composition Profile in Mercury Cadmium Telluride Films Prepared by Isothermal Vapor Phase Epitaxy

1994 ◽  
Vol 35 (5) ◽  
pp. 370-372
Author(s):  
Norio Takeuchi ◽  
Hiroshi Kobayashi ◽  
Yasutoshi Noda ◽  
Yoshitaka Furukawa
Keyword(s):  
Cadmium Telluride ◽  
Vapor Phase ◽  
Mercury Cadmium Telluride ◽  
Vapor Phase Epitaxy ◽  
Composition Profile

Chemistry of Cadmium Telluride Organometallic Vapor-Phase Epitaxy

1995 ◽  
Vol 99 (11) ◽  
pp. 3574-3582 ◽  
Author(s):  
Anthony H. McDaniel ◽  
Kerri J. Wilkerson ◽  
Robert F. Hicks
Keyword(s):  
Cadmium Telluride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Photochemical Organometallic Vapor Phase Epitaxy Of Mercury Cadmium Telluride

1985 ◽  
Vol 54 ◽  
Author(s):  
B. J. Morris
Keyword(s):  
Liquid Phase ◽  
Vapor Phase ◽  
Mercury Cadmium Telluride ◽  
Molecular Beam ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Material Development ◽  
Fundamental Limitations ◽  
A New Technique

Because of the difficulty in preparing single-crystalline Hg1−xCdx Te with adequate control of properties for detector array manufacturing, the emphasis in material development has shifted to epitaxial techniques, such as molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), and organometallic vapor phase epitaxy (OMVPE, sometimes called MOCVD). Each of the epitaxial techniques thus far reported has fundamental limitations such as a requirement for high growth temperature (LPE and OMVPE) or low growth rates (MBE). We report here preliminary results on a new technique, called photochemical organometallic vapor phase epitaxy (POMVPE), which apparently does not have the limitations of other epitaxial methods for growing Hg Cd Te films.

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