Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

IEEE Electron Device Letters ◽

10.1109/55.830963 ◽

2000 ◽

Vol 21 (4) ◽

pp. 146-148 ◽

Author(s):

Yan-Kuin Su ◽

Jia-Rong Chang ◽

Yan-Ten Lu ◽

Chuing-Liang Lin ◽

Kuo-Ming Wu ◽

...

Keyword(s):

Resonant Tunneling ◽

Room Temperature ◽

Resonant Tunneling Diode ◽

High Peak ◽

Current Ratio ◽

Double Barrier ◽

Tunneling Diode ◽

Double Barrier Resonant Tunneling

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Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si

10.7567/ssdm.2018.a-3-05 ◽

2018 ◽

Author(s):

H. Tonegawa ◽

Y. Kumagai ◽

S. Fukuyama ◽

K. Hirose ◽

M. Watanabe

Keyword(s):

Resonant Tunneling ◽

Room Temperature ◽

Resonant Tunneling Diode ◽

High Peak ◽

Current Ratio ◽

Tunneling Diode

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Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates

Applied Physics Letters ◽

10.1063/1.2709508 ◽

2007 ◽

Vol 90 (9) ◽

pp. 092101 ◽

Author(s):

Tohru Kanazawa ◽

Ryo Fujii ◽

Takafumi Wada ◽

Yusuke Suzuki ◽

Masahiro Watanabe ◽

...

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Differential Resistance ◽

Resonant Tunneling Diode ◽

Double Barrier ◽

Tunneling Diode ◽

Double Barrier Resonant Tunneling

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CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.l716 ◽

2000 ◽

Vol 39 (Part 2, No. 7B) ◽

pp. L716-L719 ◽

Author(s):

Masahiro Watanabe ◽

Toshiyuki Funayama ◽

Taishi Teraji ◽

Naoto Sakamaki

Keyword(s):

Resonant Tunneling ◽

Room Temperature ◽

Resonant Tunneling Diode ◽

Temperature Peak ◽

Double Barrier ◽

Tunneling Diode ◽

Double Barrier Resonant Tunneling ◽

Peak To Valley Ratio

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Room temperature negative differential resistance with high peak-to-valley current ratio of CdF/sub 2//CaF/sub 2/ resonant tunneling diode on silicon

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929103 ◽

2002 ◽

Author(s):

M. Watanabe ◽

N. Sakamaki ◽

T. Ishikawa

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Differential Resistance ◽

Resonant Tunneling Diode ◽

High Peak ◽

Current Ratio ◽

Tunneling Diode

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Stability considerations for a double-barrier resonant-tunneling diode

Superlattices and Microstructures ◽

10.1016/0749-6036(92)90219-u ◽

1992 ◽

Vol 12 (1) ◽

pp. 53-56 ◽

Author(s):

H.P. Joosten ◽

H.J.M.F. Noteborn ◽

K. Kaski ◽

D. Lenstra

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diode ◽

Double Barrier ◽

Tunneling Diode ◽

Double Barrier Resonant Tunneling

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Single-well resonant-tunneling diode heterostructures based on In0.53Ga0.47As/AlAs/InP with the peak-to-valley current ratio of 22:1 at room temperature

Bulletin of the Lebedev Physics Institute ◽

10.3103/s106833561308006x ◽

2013 ◽

Vol 40 (8) ◽

pp. 240-243

Author(s):

V. S. Syzranov ◽

O. A. Klimenko ◽

A. S. Ermolov ◽

I. P. Kazakov ◽

S. S. Shmelev ◽

...

Keyword(s):

Resonant Tunneling ◽

Room Temperature ◽

Resonant Tunneling Diode ◽

Current Ratio ◽

Tunneling Diode ◽

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Dominant photogenerated valley current in a double‐barrier resonant‐tunneling diode

Applied Physics Letters ◽

10.1063/1.112489 ◽

1994 ◽

Vol 65 (23) ◽

pp. 2999-3001 ◽

Author(s):

H. S. Li ◽

L. P. Chen ◽

Y. W. Chen ◽

K. L. Wang ◽

D. S. Pan ◽

...

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diode ◽

Double Barrier ◽

Tunneling Diode ◽

Double Barrier Resonant Tunneling

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Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode

IEEE Transactions on Electron Devices ◽

10.1109/16.831012 ◽

2000 ◽

Vol 47 (4) ◽

pp. 895-897

Author(s):

Yan-Kuin Su ◽

Jia-Rong Chang ◽

Yan-Ten Lu ◽

Chuing-Liang Lin ◽

Kuo-Ming Wu

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diode ◽

Double Barrier ◽

Tunneling Diode ◽

Double Barrier Resonant Tunneling

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The stability of the self‐consistently determined current of a double‐barrier resonant‐tunneling diode

Journal of Applied Physics ◽

10.1063/1.349294 ◽

1991 ◽

Vol 70 (6) ◽

pp. 3141-3147 ◽

Author(s):

H. P. Joosten ◽

H. J. M. F. Noteborn ◽

K. Kaski ◽

D. Lenstra

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diode ◽

The Self ◽

Double Barrier ◽

Tunneling Diode ◽

The Stability ◽

Double Barrier Resonant Tunneling

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Self‐consistent model of a double‐barrier resonant tunneling diode: Dependence of intrinsic bistability on structural parameters

Journal of Applied Physics ◽

10.1063/1.353754 ◽

1993 ◽

Vol 73 (10) ◽

pp. 5254-5263 ◽

Author(s):

Yuming Hu ◽

Shawn Stapleton

Keyword(s):

Resonant Tunneling ◽

Structural Parameters ◽

Resonant Tunneling Diode ◽

Double Barrier ◽

Tunneling Diode ◽

Consistent Model ◽

Self Consistent ◽

Double Barrier Resonant Tunneling

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