Single-well resonant-tunneling diode heterostructures based on In0.53Ga0.47As/AlAs/InP with the peak-to-valley current ratio of 22:1 at room temperature

2013 ◽  
Vol 40 (8) ◽  
pp. 240-243
Author(s):  
V. S. Syzranov ◽  
O. A. Klimenko ◽  
A. S. Ermolov ◽  
I. P. Kazakov ◽  
S. S. Shmelev ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diode ◽  
Current Ratio ◽  
Tunneling Diode ◽  
Single Well

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

2000 ◽  
Vol 21 (4) ◽  
pp. 146-148 ◽  
Author(s):  
Yan-Kuin Su ◽  
Jia-Rong Chang ◽  
Yan-Ten Lu ◽  
Chuing-Liang Lin ◽  
Kuo-Ming Wu ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diode ◽  
High Peak ◽  
Current Ratio ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Double Barrier Resonant Tunneling

Room Temperature Oscillation in Si/Si1-xGex Resonant Tunneling Diode

2007 ◽  
Author(s):  
Yoshiyuki Suda ◽  
Hirotaka Maekawa ◽  
Naoya Asaoka ◽  
Michihiko Suhara
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Temperature Oscillation ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode
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