Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

1.5-1.6 μm VCSEL for metro WDM applications

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929007 ◽

2002 ◽

Cited By ~ 1

Author(s):

C.J. Chang-Hasnain

Download Full-text

Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929060 ◽

2002 ◽

Author(s):

Y. Sun ◽

W. Wang ◽

W.X. Chen ◽

G.L. Liu ◽

F. Zhou ◽

...

Keyword(s):

Extinction Ratio ◽

High Extinction Ratio ◽

Low Capacitance

Download Full-text

MOMBE growth and optical properties of Er-doped GaNP

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929212 ◽

2002 ◽

Author(s):

I. Suemune ◽

T. Shimozawa ◽

K. Uesugi ◽

H. Kumano ◽

T. Sekiguchi ◽

...

Keyword(s):

Optical Properties ◽

Er Doped

Download Full-text

Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3 μm lasers using metal-organic vapor-phase epitaxy

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929211 ◽

2002 ◽

Author(s):

G. Plaine ◽

C. Asplund ◽

P. Sundgren ◽

S. Mogg ◽

M. Hammar

Keyword(s):

Low Temperature ◽

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Temperature Growth ◽

Low Temperature Growth ◽

Organic Vapor ◽

Metal Organic

Download Full-text

Bonding of p-Si/n-InP wafers through surface activated bonding method at room temperature

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929110 ◽

2002 ◽

Cited By ~ 2

Author(s):

M.M.R. Howlader ◽

T. Watanabe ◽

T. Suga

Keyword(s):

Room Temperature ◽

Bonding Method

Download Full-text

Optical properties of InP self-assembled quantum dots studied by imaging and single dot spectroscopy

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929192 ◽

2002 ◽

Author(s):

M. Sugisaki ◽

H.-W. Ren ◽

K. Nishi ◽

Y. Masumoto

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

Self Assembled

Download Full-text

Formation of GaInNAs/GaAs densely packed quantum dots by chemical beam epitaxy

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929026 ◽

2002 ◽

Author(s):

S. Makino ◽

T. Miyamoto ◽

T. Kageyama ◽

Y. Ikenaga ◽

F. Koyama ◽

...

Keyword(s):

Quantum Dots ◽

Chemical Beam Epitaxy

Download Full-text

Transmission measurements at 1.55 μm on photonic-crystal ultrashort bend waveguides fabricated on InP based guiding layer

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929227 ◽

2002 ◽

Author(s):

A. Talneau ◽

L. Le Gouezigou ◽

N. Bouadma

Keyword(s):

Photonic Crystal ◽

Transmission Measurements

Download Full-text

Self-organized InGaAs quantum dots for advanced applications in optoelectronics

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929004 ◽

2002 ◽

Cited By ~ 1

Author(s):

N.N. Ledentsov ◽

D. Bimberg ◽

V.M. Ustinov ◽

Zh.I. Alferov ◽

J.A. Lott

Keyword(s):

Quantum Dots ◽

Self Organized ◽

Advanced Applications

Download Full-text

Investigation of InP epitaxial films on GaAs substrate grown by chloride vapor phase epitaxy

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929118 ◽

2002 ◽

Author(s):

S. Sawada ◽

S. Matsukawa ◽

T. Iwasaki ◽

Y. Miura ◽

M. Yokogawa

Keyword(s):

Vapor Phase ◽

Gaas Substrate ◽

Epitaxial Films ◽

Vapor Phase Epitaxy

Download Full-text

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

1.5-1.6 μm VCSEL for metro WDM applications

Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

MOMBE growth and optical properties of Er-doped GaNP

Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3 μm lasers using metal-organic vapor-phase epitaxy

Bonding of p-Si/n-InP wafers through surface activated bonding method at room temperature

Optical properties of InP self-assembled quantum dots studied by imaging and single dot spectroscopy

Formation of GaInNAs/GaAs densely packed quantum dots by chemical beam epitaxy

Transmission measurements at 1.55 μm on photonic-crystal ultrashort bend waveguides fabricated on InP based guiding layer

Self-organized InGaAs quantum dots for advanced applications in optoelectronics

Investigation of InP epitaxial films on GaAs substrate grown by chloride vapor phase epitaxy

Export Citation Format

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

1.5-1.6 μm VCSEL for metro WDM applications

Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

MOMBE growth and optical properties of Er-doped GaNP

Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3 μm lasers using metal-organic vapor-phase epitaxy

Bonding of p-Si/n-InP wafers through surface activated bonding method at room temperature

Optical properties of InP self-assembled quantum dots studied by imaging and single dot spectroscopy

Formation of GaInNAs/GaAs densely packed quantum dots by chemical beam epitaxy

Transmission measurements at 1.55 μm on photonic-crystal ultrashort bend waveguides fabricated on InP based guiding layer

Self-organized InGaAs quantum dots for advanced applications in optoelectronics

Investigation of InP epitaxial films on GaAs substrate grown by chloride vapor phase epitaxy

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
Latest Publications