High efficiency InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition

IEEE Photonics Technology Letters ◽

10.1109/68.281798 ◽

1994 ◽

Vol 6 (4) ◽

pp. 468-470 ◽

Author(s):

H. Zhao ◽

M.H. MacDougal ◽

N.C. Frateschi ◽

S. Siala ◽

P.D. Dapkus ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Chemical Vapor ◽

Single Step ◽

Single Quantum ◽

Single Quantum Well ◽

Metalorganic Chemical

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Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition

10.1117/12.176612 ◽

1994 ◽

Author(s):

Hanmin Zhao ◽

Michael H. MacDougal ◽

Kushant Uppal ◽

Newton C. Frateschi ◽

Paul D. Dapkus ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Step ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold ◽

Metalorganic Chemical

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Comment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett.53, 495 (1988)]

Applied Physics Letters ◽

10.1063/1.102211 ◽

1989 ◽

Vol 55 (16) ◽

pp. 1689-1689 ◽

Author(s):

Michio Sato ◽

Yoshiji Horikoshi

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures ◽

Metalorganic Chemical

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Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90753 ◽

1979 ◽

Vol 34 (4) ◽

pp. 265-267 ◽

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

R. Chin ◽

N. Holonyak ◽

S. W. Kirchoefer

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Laser Operation ◽

Single Quantum ◽

Single Quantum Well ◽

Metalorganic Chemical

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Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.93476 ◽

1982 ◽

Vol 41 (3) ◽

pp. 228-230 ◽

Author(s):

R. D. Burnham ◽

D. R. Scifres ◽

W. Streifer

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Diode Lasers ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold ◽

Metalorganic Chemical

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Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition

10.1117/12.757818 ◽

2007 ◽

Author(s):

Jinshe Yuan ◽

Mingyue Wang ◽

Guohao Yu

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Time Resolved ◽

Time Resolved Photoluminescence ◽

Metalorganic Chemical

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IIIA-5 low threshold, high efficiency Ga1-xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1982.20957 ◽

1982 ◽

Vol 29 (10) ◽

pp. 1674-1674

Author(s):

R.D. Burnham ◽

D.R. Scifres ◽

W. Streifer

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Diode Lasers ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold ◽

Metalorganic Chemical

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Very narrow graded‐barrier single quantum well lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.93352 ◽

1982 ◽

Vol 41 (10) ◽

pp. 912-914 ◽

Author(s):

D. Kasemset ◽

C. S. Hong ◽

N. B. Patel ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Metalorganic Chemical

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A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition

IEEE Photonics Technology Letters ◽

10.1109/68.334816 ◽

1994 ◽

Vol 6 (11) ◽

pp. 1289-1292 ◽

Author(s):

M.L. Osowski ◽

T.M. Cockerill ◽

R.M. Lammert ◽

D.V. Forbes ◽

D.E. Ackley ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Broad Spectrum ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Selective Area ◽

Metalorganic Chemical

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A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition

Proceedings of LEOS'94 ◽

10.1109/leos.1994.586921 ◽

2002 ◽

Author(s):

M.L. Osowski ◽

T.M. Cockerill ◽

R.M. Lammert ◽

D.V. Forbes ◽

D.E. Ackley ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Broad Spectrum ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Selective Area ◽

Metalorganic Chemical

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Response to ‘‘Comment on ‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’ ’’ [Appl. Phys. Lett.55, 1689 (1989)]

Applied Physics Letters ◽

10.1063/1.102193 ◽

1989 ◽

Vol 55 (16) ◽

pp. 1690-1690 ◽

Author(s):

K. Taira ◽

H. Kawai ◽

I. Hase ◽

K. Kaneko ◽

N. Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures ◽

Metalorganic Chemical

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