Ion-beam milling of YBCO thin films and their characterization by time-resolved pump-probe method

1999 ◽  
Vol 9 (2) ◽  
pp. 1952-1955 ◽  
Author(s):  
M. Hangyo ◽  
S. Nashima ◽  
M. Kawamura ◽  
S. Shikii ◽  
M. Tonouchi
2004 ◽  
Author(s):  
Anna K. Kristoffersen ◽  
H. Tiedje ◽  
Robert A. Hughes ◽  
Harold K. Haugen ◽  
Thomas Timusk ◽  
...  

2011 ◽  
Vol 01 (02) ◽  
pp. 81-84 ◽  
Author(s):  
Cheng Bao Yao ◽  
Elisee Kponou ◽  
Yun Dong Zhang ◽  
Jin Fang Wang ◽  
Ping Yuan

2001 ◽  
Vol 229 (1-4) ◽  
pp. 321-324 ◽  
Author(s):  
T Endo ◽  
KI Itoh ◽  
A Hashizume ◽  
H Kohmoto ◽  
E Takahashi ◽  
...  

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3932-3935
Author(s):  
SHINGO SAITO ◽  
TOHRU SUEMOTO

Time-resolved electronic Raman scattering of a direct-gap semiconductor, InAs was measured by pump-probe method. We used fundamental pulses and second harmonic pulses of mode-locked Ti:S laser as excitation sources, and fundamental pulses as the probe beam. The time-resolved Raman intensities corresponding to the transition from heavy hole band to light hole band showed different features depending on the excitation energy. In case of the fundamental beam excitation, Raman intensity decreased monotonously. On the contrary, Raman intensity under the second harmonic excitation showed a maximum at a few picosecond after excitation. From the analysis, the temperature of photo-excited hole changed from 5300K to 1300K in 2psec and from 1300K to RT within 4 psec under the second harmonics excitation. It has been shown that the time-resolved Raman scattering measurement is a useful tool to investigate dynamics of the energetic carriers.


1989 ◽  
pp. 419-427
Author(s):  
S. MICHEL ◽  
J.H. JAMES ◽  
B. DWIR ◽  
M. AFFRONTE ◽  
B. KELLETT ◽  
...  
Keyword(s):  
Ion Beam ◽  

1991 ◽  
Vol 27 (2) ◽  
pp. 1463-1466 ◽  
Author(s):  
K. Li ◽  
J.E. Johnson
Keyword(s):  
Ion Beam ◽  

2000 ◽  
Vol 659 ◽  
Author(s):  
M. Li ◽  
B. Ma ◽  
Y. A. Jee ◽  
B. L. Fisher ◽  
U. Balachandran

ABSTRACTOxide high-Tc superconducting wires and tapes with high critical current density (Jc) are essential to future electrical power applications. Recently, YBa2Cu3O7−x (YBCO) thin films grown on Ni-based alloy tapes have attracted intense interest because of their promise for these applications. To achieve high Jc, buffer layers are necessary for fabricating biaxially aligned YBCO thin films. In our studies, yttria-stabilized zirconia (YSZ) layers were deposited on Ni- based alloy substrates by ion-beam assisted deposition, and CeO2 buffer layers were subsequently deposited on the YSZ layer by pulsed laser deposition (PLD) or electron beam evaporation. In addition, MgO layers were deposited on Ni-based alloy substrates by inclined substrate deposition. Finally, biaxially textured YBCO thin films were deposited on these buffered metallic substrates by PLD under optimized conditions. The orientation and in-plane textures of YBCO and the buffer layers were characterized by X-ray diffraction Ø/2Øscans, ø- scans, and pole figure analysis. The superconductive transition features were examined by measuring inductive Tc and transport Jc.


1993 ◽  
Vol 47 (12) ◽  
pp. 2058-2060 ◽  
Author(s):  
Yoshihiro Mizugai ◽  
Jody J. Klaassen ◽  
Christine Roche ◽  
Jeffrey I. Steinfeld

We have used a time-resolved double-resonance (pump-probe) method to assign the CHD3 spectra taken by an FT-IR spectrometer at high resolution. The spectra of 2ν3, ν3 + ν6, and 2ν6 around 2000 cm−1 were investigated. Collisional processes in the molecule were investigated by the time evolution of the signal and double-resonance spectra.


2011 ◽  
Vol 1338 ◽  
Author(s):  
Robert E. Simpson ◽  
Paul J. Fons ◽  
Alexander V. Kolobov ◽  
Xiomin Wang ◽  
Junji Tominaga

ABSTRACTThe origin of sub-diffraction-limit apertures in Sb-based thin films is discussed. Electromagnetic energy can be channeled by these apertures thus allowing near-field focussing- the Super-RENS effect. The aperture formation within Sb, Sb2Te3, Sb2Te, SbTe and Ge2Sb2Te5 is investigated by time resolved optical pump-probe techniques and found to occur without melting. Density functional calculations have shown that these materials exhibit a thresholdlike change in their optical properties below their melting temperatures. The threshold is shown to be a consequence of thermally induced misalignment of p-orbital bonds. It is the non-linearity of this process that leads to the formation of the sub-diffraction-limit apertures.


1989 ◽  
Vol 151 ◽  
pp. 419-427 ◽  
Author(s):  
S Michel ◽  
J.H James ◽  
B Dwir ◽  
M Affronte ◽  
B Kellett ◽  
...  
Keyword(s):  
Ion Beam ◽  

Sign in / Sign up

Export Citation Format

Share Document