SPATIAL AND MOMENTUM DIFFUSION OF ENERGETIC HOLES IN InAs BY TWO COLOR PUMP-PROBE METHOD

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3932-3935
Author(s):  
SHINGO SAITO ◽  
TOHRU SUEMOTO
Keyword(s):  
Raman Scattering ◽  
Second Harmonic ◽  
Harmonic Excitation ◽  
Probe Method ◽  
Raman Intensity ◽  
Time Resolved ◽  
Pump Probe ◽  
Electronic Raman Scattering ◽  
Hole Band ◽  
Scattering Measurement

Time-resolved electronic Raman scattering of a direct-gap semiconductor, InAs was measured by pump-probe method. We used fundamental pulses and second harmonic pulses of mode-locked Ti:S laser as excitation sources, and fundamental pulses as the probe beam. The time-resolved Raman intensities corresponding to the transition from heavy hole band to light hole band showed different features depending on the excitation energy. In case of the fundamental beam excitation, Raman intensity decreased monotonously. On the contrary, Raman intensity under the second harmonic excitation showed a maximum at a few picosecond after excitation. From the analysis, the temperature of photo-excited hole changed from 5300K to 1300K in 2psec and from 1300K to RT within 4 psec under the second harmonics excitation. It has been shown that the time-resolved Raman scattering measurement is a useful tool to investigate dynamics of the energetic carriers.

Ion-beam milling of YBCO thin films and their characterization by time-resolved pump-probe method

1999 ◽  
Vol 9 (2) ◽  
pp. 1952-1955 ◽  
Author(s):  
M. Hangyo ◽  
S. Nashima ◽  
M. Kawamura ◽  
S. Shikii ◽  
M. Tonouchi
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Probe Method ◽  
Time Resolved ◽  
Pump Probe ◽  
Ybco Thin Films

Time‐resolved Raman scattering measurement of photoexcited plasmon in GaP crystals

1986 ◽  
Vol 60 (9) ◽  
pp. 3303-3308 ◽  
Author(s):  
H. Yugami ◽  
S. Nakashima ◽  
Y. Oka ◽  
M. Hangyo ◽  
A. Mitsuishi
Keyword(s):  
Raman Scattering ◽  
Time Resolved ◽  
Scattering Measurement

Overtone Spectra of CHD3 with an FT-IR Spectrometer Aided by Infrared Double Resonance

1993 ◽  
Vol 47 (12) ◽  
pp. 2058-2060 ◽  
Author(s):  
Yoshihiro Mizugai ◽  
Jody J. Klaassen ◽  
Christine Roche ◽  
Jeffrey I. Steinfeld
Keyword(s):  
High Resolution ◽  
Time Evolution ◽  
Double Resonance ◽  
Probe Method ◽  
Time Resolved ◽  
Pump Probe ◽  
Ft Ir

We have used a time-resolved double-resonance (pump-probe) method to assign the CHD3 spectra taken by an FT-IR spectrometer at high resolution. The spectra of 2ν3, ν3 + ν6, and 2ν6 around 2000 cm−1 were investigated. Collisional processes in the molecule were investigated by the time evolution of the signal and double-resonance spectra.

Optical Characterization of SiC Wafers

1999 ◽  
Vol 572 ◽  
Author(s):  
J. C. Burton ◽  
M. Pophristic ◽  
F. H. Long ◽  
I. Ferguson
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Laser Wavelength ◽  
Time Resolved ◽  
Near Ir ◽  
Electronic Raman Scattering ◽  
Defect Levels ◽  
Sic Wafer ◽  
Time Resolved Photoluminescence

ABSTRACTRaman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The two-phonon Raman spectra from both 4H- and 6H-SiC have been measured and found to be polytype dependent, consistent with changes in the vibrational density of states. We have observed electronic Raman scattering from nitrogen defect levels in both 4H- and 6H-SiC at room temperature. We have found that electronic Raman scattering from the nitrogen defect levels is significantly enhanced with excitation by red or near IR laser light. These results demonstrate that the laser wavelength is a key parameter in the characterization of SiC by Raman scattering. These results suggest that Raman spectroscopy can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. We also present results on time-resolved photoluminescence spectra of n-type SiC wafers.

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