Device Noise Parameters Characterization: Towards Extraction Automation.

2020 ◽  
Author(s):  
Luciano Boglione ◽  
Jason Roussos ◽  
Alina Caddemi ◽  
Emanuele Cardillo ◽  
Giovanni Crupi
Keyword(s):  
Noise Parameters ◽  
Device Noise

The determination of device noise parameters

1969 ◽  
Vol 57 (8) ◽  
pp. 1461-1462 ◽  
Author(s):  
R.Q. Lane
Keyword(s):  
Noise Parameters ◽  
Device Noise

Automated extraction of device noise parameters based on multi-frequency, source-pull data

2013 ◽  
Vol 6 (1) ◽  
pp. 63-72 ◽  
Author(s):  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Mirko Palomba ◽  
Ernesto Limiti
Keyword(s):  
Single Frequency ◽  
Full Description ◽  
Frequency Noise ◽  
Previous Knowledge ◽  
Active Devices ◽  
Noise Parameters ◽  
Whole Process ◽  
Novel Approach ◽  
Frequency Source ◽  
Device Noise

In this paper a novel approach for determining the four noise parameters of FET devices over frequency is presented. Such methodology is made of two parts: the first one allows to straightforwardly extract single-frequency noise parameters from source-pull data; the second one extends this capability to multi-frequency, source-pull data to obtain a full description of device noise behavior over frequency by means of at most 10 constant parameters (depending on the required accuracy). The whole process is automated via a software routine and does not need a previous knowledge of the FET equivalent circuit's topology, or the values of its elements. This peculiarity makes the proposed method very well suited to quick characterization campaigns of active devices, avoiding the burden of a whole set of prior, different measurements and the relevant, critical extraction procedures, which are strongly dependent on the device.

scholarly journals Влияние рассеянных электронов на коэффициент шума циклотронных защитных устройств

2021 ◽  
Vol 47 (12) ◽  
pp. 51
Author(s):  
С.В. Быковский
Keyword(s):  
Microwave Range ◽  
Noise Parameters ◽  
Protective Devices ◽  
Residual Gas ◽  
Additional Device ◽  
Device Noise

The influence of the scattered electrons of the beam on the noise parameters of cyclotron protective devices (CPD) of the microwave range is experimentally investigated. It is shown that the beam electrons scattered by the residual gas particles are a source of additional device noise. As an object of research we used commercially available samples of the CPD.

Signal and noise parameters of autodynes with the soft impedance characteristic of the active element (review)

2018 ◽  
Vol 1 (1) ◽  
pp. 29-47 ◽  
Author(s):  
V. Ya. Noskov ◽  
◽  
K. A. Ignatkov ◽  
D. Ya. Mishin ◽  
S. M. Smolskiy ◽  
...  
Keyword(s):  
Active Element ◽  
Impedance Characteristic ◽  
Noise Parameters

Estimating the Quality of Thermionic Cathodes for Microwave Vacuum Tubes Using the Low-Frequency Noise Parameters

Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Parameters ◽  
Thermionic Cathodes ◽  
Vacuum Tubes
Sign in / Sign up

Export Citation Format

Share Document