This paper presents a CMOS image sensor (CIS) with built-in lane detection computing circuits for automotive applications. We propose on-CIS processing with an edge detection mask used in the readout circuit of the conventional CIS structure for high-speed lane detection. Furthermore, the edge detection mask can detect the edges of slanting lanes to improve accuracy. A prototype of the proposed CIS was fabricated using a 110 nm CIS process. It has an image resolution of 160 (H) × 120 (V) and a frame rate of 113, and it occupies an area of 5900 μm × 5240 μm. A comparison of its lane detection accuracy with that of existing edge detection algorithms shows that it achieves an acceptable accuracy. Moreover, the total power consumption of the proposed CIS is 9.7 mW at pixel, analog, and digital supply voltages of 3.3, 3.3, and 1.5 V, respectively.
Single-event transient imaging with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor
