Mechanism of polarisation pinning in vertical cavity surface emitting lasers using focused ion beam etching

Author(s):  
L.J. Sargent ◽  
J.m. Rorison ◽  
I.H. White ◽  
R.V. Penty ◽  
M. Kuball ◽  
...  
Author(s):  
D.T. Mathes ◽  
J. Guenter ◽  
B. Hawkins ◽  
B. Hawthorne ◽  
C. Johnson

Abstract AOC herein describes a collection of material degradation features observed in Vertical Cavity Surface Emitting Lasers (VCSELs) that have been intentionally degraded with a range of electrostatic discharge (ESD) stress conditions. Failure analysis techniques employed include emission microscopy, Focused Ion Beam (FIB) microscopy and Transmission Electron Microscopy (TEM). The results have enabled higher confidence in root-cause determination for failed VCSEL devices.


1997 ◽  
Vol 484 ◽  
Author(s):  
Min Soo Park ◽  
Byung Tae Ahn ◽  
Hye Yong Chu ◽  
Byueng-Su Yoo ◽  
Hyo-Hoon Park

AbstractWe have studied the effect of geometric factors on the polarization properties of verticalcavity surface-emitting lasers with tilted pillar structures. Laser pillars with circular, square, diamond, and rectangular shapes were formed using reactive ion beam etching, by tilting the substrate with an angle of 15° ∼ 30° toward the [110] or [110] direction. We measured the polarization characteristics for the devices of 10 ∼ 20 atm size. We observed that an effective geometric factor on the polarization selectivity in tilted pillar structures is an asymmetric shape of vertical-cavity rather than an anisotropic shape of device area in planar direction.


1995 ◽  
Vol 378 ◽  
Author(s):  
Hyo-Hoon Park ◽  
Byueng-Su Yoo ◽  
Min Soo Park ◽  
Jaejin Lee ◽  
Hae Gwon Lee ◽  
...  

AbstractWe report for the first time a successful application of semi-insulating amorphous GaAs layer for surface passivation of index-guided vertical-cavity surface-emitting lasers. The amorphous GaAs layers on ion-beam-etched active region and mirror layers provide a significant improvement, more than 20%, in the threshold current density and differential quantum efficiency. The improvement of these performances is attributed to low defect density at the surface of active layers induced by amorphous GaAs.


1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-3 ◽  
Author(s):  
J. Jacquet ◽  
P. Salet ◽  
A. Plais ◽  
F. Brillouet ◽  
E. Derouin ◽  
...  

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