Passivation of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers by Amorphous GaAs Deposition
Keyword(s):
Ion Beam
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AbstractWe report for the first time a successful application of semi-insulating amorphous GaAs layer for surface passivation of index-guided vertical-cavity surface-emitting lasers. The amorphous GaAs layers on ion-beam-etched active region and mirror layers provide a significant improvement, more than 20%, in the threshold current density and differential quantum efficiency. The improvement of these performances is attributed to low defect density at the surface of active layers induced by amorphous GaAs.
1995 ◽
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pp. 649-653
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pp. 229-231
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