Activated Auger Processes and their Wavelength Dependence in Type-I Mid-Infrared Laser Diodes

2019 ◽  
Author(s):  
Timothy D. Eales ◽  
Igor Vurgaftman ◽  
Jerry R. Meyer ◽  
Stephen J. Sweeney ◽  
Markus-C. Amann ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Wavelength Dependence ◽  
Infrared Laser ◽  
Type I ◽  
Mid Infrared

Equilateral-triangle-resonator mid-infrared laser diodes

2008 ◽  
Author(s):  
S.-Q. Yu ◽  
Y. Cao ◽  
S. R. Johnson ◽  
Y.-H. Zhang ◽  
Y.-Z. Huang
Keyword(s):  
Equilateral Triangle ◽  
Laser Diodes ◽  
Infrared Laser ◽  
Mid Infrared

scholarly journals Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

2017 ◽  
Vol 23 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Timothy David Eales ◽  
Igor P. Marko ◽  
Barnabas Achakpa Ikyo ◽  
Alfred R. Adams ◽  
Shamsul Arafin ◽  
...  
Keyword(s):  
Wavelength Dependence ◽  
Type I ◽  
Mid Infrared

scholarly journals Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Optica ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 263 ◽  
Author(s):  
Marta Rio Calvo ◽  
Laura Monge Bartolomé ◽  
Michaël Bahriz ◽  
Guilhem Boissier ◽  
Laurent Cerutti ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Infrared Laser ◽  
Mid Infrared

scholarly journals 2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate

2016 ◽  
Vol 2016 ◽  
pp. 1-4
Author(s):  
Minghui You ◽  
Qixiang Sun ◽  
Liping Yin ◽  
Juanjuan Fan ◽  
Xuemei Liang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Gaas Substrate ◽  
High Performance ◽  
Laser Diodes ◽  
Type I ◽  
Free Carrier Absorption ◽  
Mid Infrared ◽  
Quantum Well Laser ◽  
Carrier Absorption ◽  
Superlattice Layer

We present 2.3 μm InGaAsSb/AlGaAsSb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multiquantum wells (MQWs) for achieving balanced and optimal LDs performance. Accordingly, power of 8.6 mW was obtained with 2.3 μm wavelength. Our results demonstrate that superlattice layer may open a new avenue for high performance and improvement in mid-infrared laser diode.

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

2019 ◽  
Vol 125 (20) ◽  
pp. 205706 ◽  
Author(s):  
R. Kudrawiec ◽  
J. Kopaczek ◽  
O. Delorme ◽  
M. P. Polak ◽  
M. Gladysiewicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Laser ◽  
Type I ◽  
Laser Applications ◽  
Mid Infrared

Carrier Recombination Processes in 2.3-µm Epitaxially Grown Mid-Infrared Laser Diodes on Si(001)

2021 ◽  
Author(s):  
Aneirin R. Ellis ◽  
Igor P. Marko ◽  
Timothy D. Eales ◽  
Laurent Cerutti ◽  
Marta Rio Calvo ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Infrared Laser ◽  
Mid Infrared ◽  
Carrier Recombination ◽  
Recombination Processes

Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k•p method

2012 ◽  
Author(s):  
Baile Chen ◽  
A. L. Holmes ◽  
Viktor Khalfin ◽  
Igor Kudryashov ◽  
Bora M. Onat
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Infrared Laser ◽  
Type Ii ◽  
Mid Infrared
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