scholarly journals 2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate

2016 ◽  
Vol 2016 ◽  
pp. 1-4
Author(s):  
Minghui You ◽  
Qixiang Sun ◽  
Liping Yin ◽  
Juanjuan Fan ◽  
Xuemei Liang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Gaas Substrate ◽  
High Performance ◽  
Laser Diodes ◽  
Type I ◽  
Free Carrier Absorption ◽  
Mid Infrared ◽  
Quantum Well Laser ◽  
Carrier Absorption ◽  
Superlattice Layer

We present 2.3 μm InGaAsSb/AlGaAsSb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multiquantum wells (MQWs) for achieving balanced and optimal LDs performance. Accordingly, power of 8.6 mW was obtained with 2.3 μm wavelength. Our results demonstrate that superlattice layer may open a new avenue for high performance and improvement in mid-infrared laser diode.

ZnCdSe/ZnSe Quantum-Well Laser Diode on a (711)A GaAs Substrate

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5766-5773 ◽  
Author(s):  
Tetsuichiro Ohno ◽  
Yoshihiro Kawaguchi ◽  
Akira Ohki ◽  
Takashi Matsuoka
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Gaas Substrate ◽  
Quantum Well Laser

High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm

2013 ◽  
Author(s):  
Augustinas Vizbaras ◽  
Edgaras Dvinelis ◽  
Mindaugas Greibus ◽  
Augustinas Trinkunas ◽  
Deividas Kovalenkovas ◽  
...  
Keyword(s):  
High Performance ◽  
Laser Diodes ◽  
Type I ◽  
Spatial Mode

2.61 [micro sign]m GaInAsSb∕AIGaAsSb type I quantum well laser diodes with low threshold

2004 ◽  
Vol 40 (7) ◽  
pp. 424 ◽  
Author(s):  
A. Salhi ◽  
Y. Rouillard ◽  
J. Angellier ◽  
P. Grech ◽  
A. Vicet
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Type I ◽  
Quantum Well Laser ◽  
Low Threshold

Nitride Laser Diodes With InGaN Based Mqw Structures

1997 ◽  
Vol 482 ◽  
Author(s):  
Lisa Sugiura ◽  
Jobji Nishio ◽  
Masaaki Onomura ◽  
Shin-Ya Nunoue ◽  
Kazuhiko Itaya ◽  
...  
Keyword(s):  
Laser Diode ◽  
High Performance ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Dislocation Motion ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Mocvd Growth ◽  
Short Wavelength Light ◽  
Nitride Laser

AbstractAdvantages of applying III-V nitride materials for short wavelength light-emitting devices despite their extremely high dislocation density are discussed from the viewpoint of dislocation motion. There are also difficulties proper to these materials, which make it difficult to fabricate laser diodes. We present recent works to realize high performance laser diodes. We introduce the nitrogen ambient metalorganic chemical vapor deposition (MOCVD) growth which realizes the highly p-typed GaN films without any post-treatments. Some of our results respecting the room temperature pulsed operation of the conventional laser diode and the advanced inner stripe (IS) laser diode with InGaN based multi-quantum-well (MQW) grown by MOCVD are reported.

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