Optical transitions in a quantum dot pair with Stark-field induced coupling

2007 ◽  
Author(s):  
S. Falt ◽  
M. Atature ◽  
H. Tureci ◽  
A. Badolato ◽  
A. Imamoglu
Keyword(s):  
Quantum Dot ◽  
Optical Transitions ◽  
Stark Field

Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy

2005 ◽  
Vol 44 (No. 33) ◽  
pp. L1045-L1047
Author(s):  
Chie-In Lee ◽  
Yan-Ten Lu ◽  
Yan-Kuin Su ◽  
Shoou-Jinn Chang ◽  
Jenn-Shyong Hwang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Transitions ◽  
Photoreflectance Spectroscopy ◽  
Self Assembled ◽  
Ge Quantum Dot

Optical transitions in parabolic quantum dot

2005 ◽  
Vol 68 (10) ◽  
pp. 1726-1729
Author(s):  
E. M. Kazaryan ◽  
M. S. Atoyan ◽  
H. A. Sarkisyan
Keyword(s):  
Quantum Dot ◽  
Optical Transitions ◽  
Parabolic Quantum Dot

INTRABAND AUGER EFFECT IN QUANTUM DOT STRUCTURES

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2872-2878
Author(s):  
T. GEBHARD ◽  
K. UNTERRAINER ◽  
D. ALVARENGA ◽  
P. S. S. GUIMARAES ◽  
J. M. VILLAS-BOAS ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Conduction Band ◽  
Theoretical Calculations ◽  
Optical Transitions ◽  
Auger Process ◽  
Final State ◽  
Auger Effect ◽  
Absorption Measurements

Intraband photocurrent and absorption measurements were performed on InAs / InGaAlAs / InP quantum dot structures. To identify the optical transitions, theoretical calculations were performed and showed that the observed PC is generated by a bound to bound transition, where the final state is about 200 meV deep below the conduction band continuum. The reported results strongly suggest that an Auger process plays a fundamental role in generating the observed intraband photocurrent.

DONOR BOUND EXCITONS CONFINED IN WURTZITE InGaN/GaN QUANTUM DOT NANOWIRE HETEROSTRUCTURES

2013 ◽  
Vol 27 (32) ◽  
pp. 1350186 ◽  
Author(s):  
MIN ZHANG ◽  
JUN-JIE SHI
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Oscillator Strength ◽  
Structural Parameters ◽  
Three Dimensional ◽  
Exciton Binding Energy ◽  
Optical Transitions ◽  
Mass Approximation ◽  
Nanowire Heterostructures ◽  
The Right

Within the framework of the effective-mass approximation, the donor bound exciton states and interband optical transitions in InGaN / GaN strained quantum dot (QD) nanowire heterostructures (NWHETs) are investigated using a variational method, in which the built-in electric field (BEF) effect due to the spontaneous and piezoelectric polarizations and the three-dimensional (3D) confinement of the electron and hole in the QD are considered. Our results show that the position of the ionized donor, the strong BEF, the In-composition and the QD structural parameters have a significant influence on the donor bound exciton binding energy, the electron interband optical transitions and the exciton oscillator strength. The donor bound exciton binding energy increases obviously if the donor position changes from the left-interface to the right-interface. The BEF reduces the bound exciton binding energy and the exciton oscillator strength. The donor bound exciton binding energy increases, if the In-fraction increases. The emission wavelength monotonically increases if the QD height and radius increase.

Correlated Temporal Fluctuations and Random Intermittency of Optical Transitions in a Single Quantum Dot

2001 ◽  
Vol 224 (1) ◽  
pp. 201-205 ◽  
Author(s):  
J. Seufert ◽  
M. Obert ◽  
R. Weigand ◽  
T. K�mmell ◽  
G. Bacher ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Transitions ◽  
Single Quantum ◽  
Temporal Fluctuations ◽  
Single Quantum Dot

scholarly journals Spectral broadening of optical transitions at tunneling resonances in InAs/GaAs coupled quantum dot pairs

2020 ◽  
Vol 102 (8) ◽  
Author(s):  
P. Kumar ◽  
C. Jennings ◽  
M. Scheibner ◽  
A. S. Bracker ◽  
S. G. Carter ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Transitions ◽  
Spectral Broadening ◽  
Tunneling Resonances
Sign in / Sign up

Export Citation Format

Share Document