scholarly journals Low phase noise 2 GHz HBT push-push VCO based on an advanced low frequency noise model

2005 ◽  
Author(s):  
Cortese P ◽  
A. Sion ◽  
D. Baglieri ◽  
M. Camiade ◽  
J.C. Nallatamby ◽  
...  
Keyword(s):  
Phase Noise ◽  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Phase Noise

Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design

1998 ◽  
pp. 157-160
Author(s):  
H. van Meer ◽  
D. Schreurs ◽  
K. van der Zanden ◽  
W. De Raedt ◽  
E. Simoen ◽  
...  
Keyword(s):  
Phase Noise ◽  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Phase Noise ◽  
Inp Hemt

An advanced low-frequency noise model of GaInP-GaAs HBT for accurate prediction of phase noise in oscillators

2005 ◽  
Vol 53 (5) ◽  
pp. 1601-1612 ◽  
Author(s):  
J.-C. Nallatamby ◽  
M. Prigent ◽  
M. Camiade ◽  
A. Sion ◽  
C. Gourdon ◽  
...  
Keyword(s):  
Phase Noise ◽  
Low Frequency ◽  
Accurate Prediction ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise

Low-frequency noise properties of SiGe HBT's and application to ultra-low phase-noise oscillators

1998 ◽  
Vol 46 (5) ◽  
pp. 647-652 ◽  
Author(s):  
B. Van Haaren ◽  
M. Regis ◽  
O. Llopis ◽  
L. Escotte ◽  
A. Gruhle ◽  
...  
Keyword(s):  
Phase Noise ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Phase Noise

Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's

1999 ◽  
Vol 20 (1) ◽  
pp. 54-56 ◽  
Author(s):  
Ying-Che Tseng ◽  
W.M. Huang ◽  
E. Spears ◽  
D. Spooner ◽  
D. Ngo ◽  
...  
Keyword(s):  
Phase Noise ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Soi Mosfet ◽  
Noise Characteristics

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures

2013 ◽  
Vol 854 ◽  
pp. 21-27 ◽  
Author(s):  
N.P. Garbar ◽  
Valeriya N. Kudina ◽  
V.S. Lysenko ◽  
S.V. Kondratenko ◽  
Yu.N. Kozyrev
Keyword(s):  
High Surface ◽  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Physical Processes ◽  
Noise Sources ◽  
Noise Component ◽  
First Time ◽  
Noise Models

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.

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